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rdf:type
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Description
| - The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.
- The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period. (en)
- Experimentálně jsme určili mobilitu a koncentraci nosičů náboje v epitaxním n-GaN jako funkci teploty v rozmezí 300 až 15K. Naměřené hodnoty jsou v dobrém souladu s výsledky numerické analýzy, za předpokladu určité míry kompenzace. Po vytvoření ohmickýchkontaktů za optimální teploty a délky ohřevu jsme naměřili typické charakteristiky šumu 1/f. (cs)
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Title
| - Hooge noise parameter of epitaxial n-GaN on sapphire
- Hoogeův parametr epitaxního GaN na safíru (cs)
- Hooge noise parameter of epitaxial n-GaN on sapphire (en)
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skos:prefLabel
| - Hooge noise parameter of epitaxial n-GaN on sapphire
- Hoogeův parametr epitaxního GaN na safíru (cs)
- Hooge noise parameter of epitaxial n-GaN on sapphire (en)
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skos:notation
| - RIV/00216305:26220/05:PU52165!RIV06-MSM-26220___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/05:PU52165
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN, 1/f noise, Hooge noise parameter, ohmic contact (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Pavelka, Jan
- Tacano, Munecazu
- Šikula, Josef
- Tanuma, Nobuhisa
- Matsui, Toshiaki
- Hashiguchi, Sumihisa
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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