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  • The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period.
  • The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period. (en)
  • Experimentálně jsme určili mobilitu a koncentraci nosičů náboje v epitaxním n-GaN jako funkci teploty v rozmezí 300 až 15K. Naměřené hodnoty jsou v dobrém souladu s výsledky numerické analýzy, za předpokladu určité míry kompenzace. Po vytvoření ohmickýchkontaktů za optimální teploty a délky ohřevu jsme naměřili typické charakteristiky šumu 1/f. (cs)
Title
  • Hooge noise parameter of epitaxial n-GaN on sapphire
  • Hoogeův parametr epitaxního GaN na safíru (cs)
  • Hooge noise parameter of epitaxial n-GaN on sapphire (en)
skos:prefLabel
  • Hooge noise parameter of epitaxial n-GaN on sapphire
  • Hoogeův parametr epitaxního GaN na safíru (cs)
  • Hooge noise parameter of epitaxial n-GaN on sapphire (en)
skos:notation
  • RIV/00216305:26220/05:PU52165!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany
  • 865-870
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021630503)
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 523718
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/05:PU52165
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • GaN, 1/f noise, Hooge noise parameter, ohmic contact (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [83F664ECBF07]
http://linked.open...i/riv/nazevZdroje
  • Solid State Electronics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 49
http://linked.open...iv/tvurceVysledku
  • Pavelka, Jan
  • Tacano, Munecazu
  • Šikula, Josef
  • Tanuma, Nobuhisa
  • Matsui, Toshiaki
  • Hashiguchi, Sumihisa
http://linked.open...n/vavai/riv/zamer
issn
  • 0038-1101
number of pages
http://localhost/t...ganizacniJednotka
  • 26220
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