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  • This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver.
  • This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver. (en)
  • This contribution describes a concrete construction of a driver for power transistors MOSFET and IGBT. A galvanic separation by high frequency transformers is used. A very low delay of the transferred switching signal was achieved with this construction. The most important advantage of the construction is the obtained high immunity to the du/dt voltage slope between the primary and secondary side of the driver. (cs)
Title
  • A driver for a power transistor with a high immunity to the du/dt slope (en)
  • BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt
  • BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt (cs)
skos:prefLabel
  • A driver for a power transistor with a high immunity to the du/dt slope (en)
  • BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt
  • BUDIČ VÝKONOVÉHO SPÍNACÍHO TRANZISTORU S VYSOKOU ODOLNOSTÍ VŮČI STRMOSTI du/dt (cs)
skos:notation
  • RIV/00216305:26220/04:PU46547!RIV11-MSM-26220___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • V, Z(MSM 262200010)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 556633
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/04:PU46547
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • transistor MOSFET, transistor IGBT, power electronics, power converters, drivers for power switching transistors, galvanic separation (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [29C39EA95CCE]
http://linked.open...v/mistoKonaniAkce
  • Praha
http://linked.open...i/riv/mistoVydani
  • Praha
http://linked.open...i/riv/nazevZdroje
  • XX. Mezinárodní sÿmpozium učitelů elektrických pohonů SYMEP 2004
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Vorel, Pavel
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • České vysoké učení technické v Praze
https://schema.org/isbn
  • 80-01-03018-0
http://localhost/t...ganizacniJednotka
  • 26220
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