About: Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model     Goto   Sponge   NotDistinct   Permalink

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  • Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlattion quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
  • Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlattion quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model. (en)
  • Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlattion quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model. (cs)
Title
  • Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model
  • Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model (en)
  • Hogeův parametr ve strukturách InGaAs (cs)
skos:prefLabel
  • Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model
  • Hooge Parameter of InGaAs Heterostructures Experimental Support fo 1/f Energy Patrition Model (en)
  • Hogeův parametr ve strukturách InGaAs (cs)
skos:notation
  • RIV/00216305:26220/03:PU39317!RIV/2005/MSM/262205/N
http://linked.open.../vavai/riv/strany
  • 123-126
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 605)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 609288
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26220/03:PU39317
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • noise, fluctuations (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [0C966E7E9281]
http://linked.open...v/mistoKonaniAkce
  • Prague
http://linked.open...i/riv/mistoVydani
  • Prague
http://linked.open...i/riv/nazevZdroje
  • Noise and Fluctuations
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Pavelka, Jan
  • Tacano, Munecazu
  • Šikula, Josef
  • Tanuma, Nobuhisa
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • CNRL
https://schema.org/isbn
  • 80-239-1005-1
http://localhost/t...ganizacniJednotka
  • 26220
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