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rdf:type
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Description
| - Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.
- Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. (en)
- Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. (cs)
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Title
| - Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu (cs)
- Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport
- Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport (en)
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skos:prefLabel
| - Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu (cs)
- Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport
- Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport (en)
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skos:notation
| - RIV/00216305:26220/02:PU52212!RIV06-MSM-26220___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/02:PU52212
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN, scattering, mobility (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
| - Meisei University, Tokyo, Japan
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Proceedings of the 13th Symposium on Advanced Materials
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Pavelka, Jan
- Tacano, Munecazu
- Yamada, M.
- Tanuma, Nobuhisa
- Tanizaki, H.
- Tanoue, H.
- Tomisawa, K.
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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http://localhost/t...ganizacniJednotka
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