About: Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN

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About: Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. (en) Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement. (cs)
Title	Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu (cs) Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport (en)
skos:prefLabel	Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu (cs) Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport (en)
skos:notation	RIV/00216305:26220/02:PU52212!RIV06-MSM-26220___
http://linked.open.../vavai/riv/strany	132-135
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM 262200022)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Pavelka, Jan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	644777
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/02:PU52212
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN, scattering, mobility (en)
http://linked.open.../riv/klicoveSlovo	scattering GaN mobility
http://linked.open...ontrolniKodProRIV	[28A067E49979]
http://linked.open...v/mistoKonaniAkce	Meisei University, Tokyo, Japan
http://linked.open...i/riv/mistoVydani	Tokio
http://linked.open...i/riv/nazevZdroje	Proceedings of the 13th Symposium on Advanced Materials
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2002
http://linked.open...iv/tvurceVysledku	Pavelka, Jan Tacano, Munecazu Yamada, M. Tanuma, Nobuhisa Tanizaki, H. Tanoue, H. Tomisawa, K.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2002-11-16 (xsd:date)
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20262200022
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Meisei Univeristy
http://localhost/t...ganizacniJednotka	26220

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