About: Strain mapping by scanning low energy electron microscopy

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Various techniques exist which are capable of studying the material microstructure, the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way to visualizing the microstructure of polycrystalline materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition, is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enables us to observe specimens at arbitrary landing energies of the primary electrons and to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channelling, mostly in the Mott scattering angular range. The material under investigation was a commercial purity copper prepared by equal channel angular pressing (ECAP) method using 8 passes, route Bc, namely in the as-pressed state and after annealing (in argon atmosphere, 180 C, 6 minutes Various techniques exist which are capable of studying the material microstructure, the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way to visualizing the microstructure of polycrystalline materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition, is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enables us to observe specimens at arbitrary landing energies of the primary electrons and to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channelling, mostly in the Mott scattering angular range. The material under investigation was a commercial purity copper prepared by equal channel angular pressing (ECAP) method using 8 passes, route Bc, namely in the as-pressed state and after annealing (in argon atmosphere, 180 C, 6 minutes (en)
Title	Strain mapping by scanning low energy electron microscopy Strain mapping by scanning low energy electron microscopy (en)
skos:prefLabel	Strain mapping by scanning low energy electron microscopy Strain mapping by scanning low energy electron microscopy (en)
skos:notation	RIV/00216305:26210/10:PU88560!RIV11-MSM-26210___
http://linked.open...avai/riv/aktivita	S Z
http://linked.open...avai/riv/aktivity	S, Z(MSM0021630508)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Kouřil, Miloslav Mikmeková, Šárka Pantělejev, Libor Man, Ondřej
http://linked.open.../riv/druhVysledku	O - Ostatní výsledky nezařaditelné do žádného z výše uvedených druhů výsledku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	290200
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/10:PU88560
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain (en)
http://linked.open.../riv/klicoveSlovo	contrast of crystal orientation microscopic strain scanning low energy electron microscopy (SLEEM)
http://linked.open...ontrolniKodProRIV	[4E91FAB908B5]
http://linked.open...in/vavai/riv/obor	JG
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Mikmeková, Šárka Hovorka, Miloš Müllerová, Ilona Frank, Luděk Pantělejev, Libor Man, Ondřej Kouřil, Miloslav
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
http://localhost/t...ganizacniJednotka	26210

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