About: Formation of copper islands on a native SiO2 surface at elevated temperatures

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A combination of in situ X-ray photoelectron spectroscopy analysis and ex situ scanning electron- and atomic force microscopy has been used to study the formation of copper islands upon Cu deposition at elevated temperatures as a basis for the guided growth of copper islands. Two different temperature regions have been found: (I) up to 250 C only close packed islands are formed due to low diffusion length of copper atoms on the surface. The SiO2 film acts as a barrier protecting the silicon substrate from diffusion of Cu atoms from oxide surface. (II) The deposition at temperatures above 300 8C leads to the formation of separate islands which are (primarily at higher temperatures) crystalline. At these temperatures, copper atoms diffuse through the SiO2 layer. However, they are not entirely dissolved in the bulk but a fraction of them forms a Cu rich layer in the vicinity of SiO2/Si interface. The high copper concentration in this layer lowers the concentration gradient between the surface and the sub A combination of in situ X-ray photoelectron spectroscopy analysis and ex situ scanning electron- and atomic force microscopy has been used to study the formation of copper islands upon Cu deposition at elevated temperatures as a basis for the guided growth of copper islands. Two different temperature regions have been found: (I) up to 250 C only close packed islands are formed due to low diffusion length of copper atoms on the surface. The SiO2 film acts as a barrier protecting the silicon substrate from diffusion of Cu atoms from oxide surface. (II) The deposition at temperatures above 300 8C leads to the formation of separate islands which are (primarily at higher temperatures) crystalline. At these temperatures, copper atoms diffuse through the SiO2 layer. However, they are not entirely dissolved in the bulk but a fraction of them forms a Cu rich layer in the vicinity of SiO2/Si interface. The high copper concentration in this layer lowers the concentration gradient between the surface and the sub (en)
Title	Formation of copper islands on a native SiO2 surface at elevated temperatures Formation of copper islands on a native SiO2 surface at elevated temperatures (en)
skos:prefLabel	Formation of copper islands on a native SiO2 surface at elevated temperatures Formation of copper islands on a native SiO2 surface at elevated temperatures (en)
skos:notation	RIV/00216305:26210/10:PU85840!RIV10-MSM-26210___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(2E08017), P(GEFON/06/E001), P(KAN400100701), P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Polčák, Josef Kolíbal, Miroslav Šikola, Tomáš Čechal, Jan Bábor, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	259563
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/10:PU85840
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Copper (Cu), Silicon (Si), Silicon dioxide (SiO2), Photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), Diffusion, Surface structures (en)
http://linked.open.../riv/klicoveSlovo	Diffusion Scanning electron microscopy (SEM) Copper (Cu) Photoelectron spectroscopy (XPS) Silicon (Si) Silicon dioxide (SiO2) Surface structures
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[3DD9A95ECBDF]
http://linked.open...i/riv/nazevZdroje	Applied Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Functional hybrid nanosystems of semiconductors and metals with organic materials (FUNS) Spin-dependent transport and electronic correlations in nanostructures Procedures and Methods to Increase Number of Researchers Structures for Nanophotonics and Nanoelectronics
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	256
http://linked.open...iv/tvurceVysledku	Kolíbal, Miroslav Šikola, Tomáš Bábor, Petr Čechal, Jan Polčák, Josef
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
issn	0169-4332
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	26210

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