About: Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí (cs) The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium (en)
Title	Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí (cs) Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature (en)
skos:prefLabel	Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí (cs) Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature (en)
skos:notation	RIV/00216305:26210/07:PU63797!RIV07-MSM-26210___
http://linked.open.../vavai/riv/strany	016011-16025
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Kostelník, Petr Kolíbal, Miroslav Šikola, Tomáš Čechal, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	422934
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/07:PU63797
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Gallium, Ga, Silicon, Si(100), Water, Surface structure, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy (en)
http://linked.open.../riv/klicoveSlovo	Silicon Ga Water Synchrotron radiation photoelectron spectroscopy Si(100) Surface structure Gallium Low energy electron diffraction (LEED)
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[66656A6DB0CC]
http://linked.open...i/riv/nazevZdroje	Journal of Physics: Condensed Matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Structures for Nanophotonics and Nanoelectronics
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	19
http://linked.open...iv/tvurceVysledku	Kolíbal, Miroslav Kostelník, Petr Šikola, Tomáš Čechal, Jan
http://linked.open...n/vavai/riv/zamer	Anorganické nanomateriály a nanostruktury: vytváření, analýza, vlastnosti
issn	0953-8984
number of pages	15 (xsd:int)
http://localhost/t...ganizacniJednotka	26210

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