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  • In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9).
  • In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). (en)
  • Příspěvek se zabývá tvorbou a analýzou ultratenkých vrstev GaN připravených metodou přímé depozice. (cs)
Title
  • Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
  • Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition (en)
  • Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem (cs)
skos:prefLabel
  • Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
  • Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition (en)
  • Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem (cs)
skos:notation
  • RIV/00216305:26210/05:PU54245!RIV06-MSM-26210___
http://linked.open...avai/riv/aktivita
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  • Z(MSM0021630508)
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  • 512055
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  • RIV/00216305:26210/05:PU54245
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  • Gallium; GaN; direct deposition (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...i/riv/kodPristupu
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  • [86776B759815]
http://linked.open...i/riv/mistoVydani
  • Vienna
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  • Kostelník, Petr
  • Mach, Jindřich
  • Spousta, Jiří
  • Voborný, Stanislav
  • Šikola, Tomáš
  • Bábor, Petr
  • Čechal, Jan
  • Potoček, Michal
http://linked.open...rzeVyzkumneZpravy
  • 1
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  • 26210
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