About: Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the coolumnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics. Thin films of metastable SiCAlN solid solution were deposited on Si(111) substrates at 550-750 degreesC, considerably below the miscibility gap of SiC and AlN phases at 1900 degreesC. Our low-temperature growth was based upon thermally activated reactions between a unimolecular precursor H3SiCN and Al atoms from an evaporative cell in a molecular-beam-epitaxy chamber. Characterization of deposited films by spectroscopic and microscopic techniques yielded near-stoichiometric composition throughout the coolumnar wurtzite structure with lattice parameters very close to those of 2H-SiC and hexagonal AlN. An average hardness of 25 GPa was measured for the SiCAlN films, comparable to that measured for sapphire. (C) 2001 American Institute of Physics. (en)
Title	Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates (en)
skos:prefLabel	Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates Low-temperature growth of SiCAlN films of high hardness on Si(111) substrates (en)
skos:notation	RIV/00216305:26210/02:PU29597!RIV/2003/MSM/262103/N
http://linked.open.../vavai/riv/strany	2880-2882
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM 262100002)
http://linked.open...iv/cisloPeriodika	18
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Roučka, Radek
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta strojního inženýrství
http://linked.open...dnocenehoVysledku	652149
http://linked.open...ai/riv/idVysledku	RIV/00216305:26210/02:PU29597
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	MOLECULAR-BEAM EPITAXY, SILICON-CARBIDE, SOLID-SOLUTIONS, ALUMINUM NITRIDE, DEPOSITION, SYSTEM, ALN, AIN (en)
http://linked.open.../riv/klicoveSlovo	MOLECULAR-BEAM EPITAXY AIN SYSTEM SOLID-SOLUTIONS DEPOSITION ALN ALUMINUM NITRIDE SILICON-CARBIDE
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[A2417E90B82D]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...UplatneniVysledku	2002
http://linked.open...v/svazekPeriodika	79
http://linked.open...iv/tvurceVysledku	Roučka, Radek Crozier, P. Kouvetakis, J. Tolle, J. Tsong, I. Smith, D. J.
http://linked.open...n/vavai/riv/zamer	http://linked.opendata.cz/resource/domain/vavai/zamer/MSM%20262100002
issn	0003-6951
number of pages	3 (xsd:int)
http://localhost/t...ganizacniJednotka	26210

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 48 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software