About: Physico-chemical properties of the thin films of the SbxSe100-x system (x = 90,85,80)     Goto   Sponge   NotDistinct   Permalink

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  • The bulk samples of SbxSe100 ? x system (x = 90, 85, 80) and their amorphous thin films were prepared by flash evaporation method. The films possess good thermal stability and high values of the activation energy of crystallization (2.55-2.97 eV). The crystalline phase possesses much lower electrical resistivity than the amorphous one (deltaRs ? 103); the temperature of crystallization Tc is from the region of 150-161 °C and increse with increasing Se content.
  • The bulk samples of SbxSe100 ? x system (x = 90, 85, 80) and their amorphous thin films were prepared by flash evaporation method. The films possess good thermal stability and high values of the activation energy of crystallization (2.55-2.97 eV). The crystalline phase possesses much lower electrical resistivity than the amorphous one (deltaRs ? 103); the temperature of crystallization Tc is from the region of 150-161 °C and increse with increasing Se content. (en)
Title
  • Physico-chemical properties of the thin films of the SbxSe100-x system (x = 90,85,80)
  • Physico-chemical properties of the thin films of the SbxSe100-x system (x = 90,85,80) (en)
skos:prefLabel
  • Physico-chemical properties of the thin films of the SbxSe100-x system (x = 90,85,80)
  • Physico-chemical properties of the thin films of the SbxSe100-x system (x = 90,85,80) (en)
skos:notation
  • RIV/00216275:25310/14:39898385!RIV15-MSM-25310___
http://linked.open...avai/riv/aktivita
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  • P(EE2.3.20.0254)
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  • October
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  • 36584
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  • RIV/00216275:25310/14:39898385
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  • antimony-rich; antimony-selenium; thin films (en)
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  • NL - Nizozemsko
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  • [56CC69B44BA5]
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  • Thin Solid Films
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  • 569
http://linked.open...iv/tvurceVysledku
  • Frumar, Miloslav
  • Košťál, Petr
  • Přikryl, Jan
  • Wágner, Tomáš
  • Střižík, Lukáš
  • Beneš, Ludvík
  • Hromádko, Luděk
http://linked.open...ain/vavai/riv/wos
  • 000344749400004
issn
  • 0040-6090
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.tsf.2014.07.056
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  • 25310
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