About: Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition

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About: Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.sciencedirect.com/science/article/pii/S0040609013002150
Description	UV pulsed laser deposition was employed for the fabrication of amorphous Ga-Ge-Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe4], eventually [GaTe4] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga-Ge-Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga10Ge15Te75. This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. UV pulsed laser deposition was employed for the fabrication of amorphous Ga-Ge-Te thin films. The local structure of the bulk glasses as well as corresponding thin films was studied using Raman scattering spectroscopy; the main structural motifs were found to be [GeTe4], eventually [GaTe4] corner-sharing tetrahedra and disordered Te chains. Optical functions of the films (refractive index, extinction coefficient) were characterized by variable angle spectroscopic ellipsometry. Photostability experiments showed all Ga-Ge-Te laser deposited films to be stable against 1550 nm laser irradiation in an as-deposited state. In an annealed state, the most photostable composition seems to be Ga10Ge15Te75. This particular composition was further studied from the point of view of thermal stability and stability against ageing in as-deposited state. (en)
Title	Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition (en)
skos:prefLabel	Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition Ga-Ge-Te amorphous thin films fabricated by pulsed laser deposition (en)
skos:notation	RIV/00216275:25310/13:39896411!RIV14-GA0-25310___
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP106/11/0506)
http://linked.open...iv/cisloPeriodika	15th March
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Němec, Petr Nazabal, Virginie
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Pardubice / Fakulta chemicko-technologická
http://linked.open...dnocenehoVysledku	76144
http://linked.open...ai/riv/idVysledku	RIV/00216275:25310/13:39896411
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	chalcogenide glass; photostability; Raman spectroscopy; optical materials; laser deposition; amorphous materials (en)
http://linked.open.../riv/klicoveSlovo	optical materials photostability Raman spectroscopy chalcogenide glass laser deposition amorphous materials
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[2E220CF9B9D0]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Pulsed laser deposition of amorphous thin films
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	531
http://linked.open...iv/tvurceVysledku	Němec, Petr Nazabal, Virginie Bouyrie, Y. Dussauze, M. Ma, H. -L. Zhang, X. -H.
http://linked.open...ain/vavai/riv/wos	000316677900071
issn	0040-6090
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.tsf.2013.01.096
http://localhost/t...ganizacniJednotka	25310

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