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Description
| - Bi2O2Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be m(ef) approximatelly 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons.
- Bi2O2Se single crystals were grown by a gas-phase transport reaction with a temperature gradient. X-ray diffraction revealed that the products crystallized in a tetragonal-type lattice with lattice parameters a = 0.38866 nm and c = 1.22001 nm. The samples were characterized by measuring the electrical conductivity, Hall coefficient, and Seebeck coefficient as functions of temperature between 80 K and 470 K. The obtained experimental data allowed us to calculate the reduced Fermi level, provided that the single-valley parabolic model applied. The corresponding value of the electron effective mass proved to be m(ef) approximatelly 0.29. Free electron mobility is governed by the scattering of carriers by acoustic phonons. (en)
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Title
| - Preparation and transport properties of Bi2O2Se single crystals
- Preparation and transport properties of Bi2O2Se single crystals (en)
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skos:prefLabel
| - Preparation and transport properties of Bi2O2Se single crystals
- Preparation and transport properties of Bi2O2Se single crystals (en)
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skos:notation
| - RIV/00216275:25310/12:39895368!RIV13-MSM-25310___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216275:25310/12:39895368
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - electrical transport; crystal growth; semiconductors (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - DE - Spolková republika Německo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Electronic Materials
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Drašar, Čestmír
- Beneš, Ludvík
- Lošťák, Petr
- Ruleová, Pavlína
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1007/s11664-012-2143-1
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http://localhost/t...ganizacniJednotka
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