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  • Sb2S3 crystal growth kinetics in (GeS2) (x) (Sb2S3)(1-x) thin films (x = 0.4 and 0.5) have been investigated through this study by optical microscopy in the temperature range of 575-623 K. Relative complex crystalline structures composed of submicrometer-thin Sb2S3 crystal fibers develop linearly with time. The data on temperature dependence of crystal growth rate exhibit an exponential behavior. Corresponding activation energies were found to be E (G) = 279 +/- A 7 kJ mol(-1) for x = 0.4 and E (G) = 255 +/- A 5 kJ mol(-1) for x = 0.5. These values are similar to activation energies of crystal growth in bulk glasses of the same compositions. The crystal growth is controlled by liquid-crystal interface kinetics. It seems that the 2D surface-nucleated growth is operative in this particular case. The calculated crystal growth rate for this model is in good agreement with experimental data. The crystal growth kinetic characteristic is similar for both the bulk glass and thin film for x = 0.4 composition. However, it differs considerably for x = 0.5 composition. Thermodynamic and kinetic aspects of crystal growth are discussed in terms of Jackson's theory of liquid-crystal interface.
  • Sb2S3 crystal growth kinetics in (GeS2) (x) (Sb2S3)(1-x) thin films (x = 0.4 and 0.5) have been investigated through this study by optical microscopy in the temperature range of 575-623 K. Relative complex crystalline structures composed of submicrometer-thin Sb2S3 crystal fibers develop linearly with time. The data on temperature dependence of crystal growth rate exhibit an exponential behavior. Corresponding activation energies were found to be E (G) = 279 +/- A 7 kJ mol(-1) for x = 0.4 and E (G) = 255 +/- A 5 kJ mol(-1) for x = 0.5. These values are similar to activation energies of crystal growth in bulk glasses of the same compositions. The crystal growth is controlled by liquid-crystal interface kinetics. It seems that the 2D surface-nucleated growth is operative in this particular case. The calculated crystal growth rate for this model is in good agreement with experimental data. The crystal growth kinetic characteristic is similar for both the bulk glass and thin film for x = 0.4 composition. However, it differs considerably for x = 0.5 composition. Thermodynamic and kinetic aspects of crystal growth are discussed in terms of Jackson's theory of liquid-crystal interface. (en)
Title
  • Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films
  • Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films (en)
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  • Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films
  • Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films (en)
skos:notation
  • RIV/00216275:25310/12:39895338!RIV13-GA0-25310___
http://linked.open...avai/riv/aktivita
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  • P(GAP106/11/1152)
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  • 1
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  • 129121
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  • RIV/00216275:25310/12:39895338
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  • optical microscopy; Ge-Sb-S; thin films; crystal growth (en)
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  • DE - Spolková republika Německo
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  • [1373986FF521]
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  • Journal of Thermal Analysis and Calorimetry
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  • 110
http://linked.open...iv/tvurceVysledku
  • Barták, Jaroslav
  • Málek, Jiří
http://linked.open...ain/vavai/riv/wos
  • 000309709900036
issn
  • 1388-6150
number of pages
http://bibframe.org/vocab/doi
  • 10.1007/s10973-011-2171-8
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  • 25310
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