About: Epitaxial Ge-crystal arrays for X-ray detection

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://iopscience.iop.org/1748-0221/9/03/C03019
Description	Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. (en)
Title	Epitaxial Ge-crystal arrays for X-ray detection Epitaxial Ge-crystal arrays for X-ray detection (en)
skos:prefLabel	Epitaxial Ge-crystal arrays for X-ray detection Epitaxial Ge-crystal arrays for X-ray detection (en)
skos:notation	RIV/00216224:14740/14:00075286!RIV15-MSM-14740___
http://linked.open...avai/riv/aktivita	I
http://linked.open...avai/riv/aktivity	I
http://linked.open...iv/cisloPeriodika	March 2014
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Meduňa, Mojmír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	14868
http://linked.open...ai/riv/idVysledku	RIV/00216224:14740/14:00075286
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Materials for solid-state detectors; Solid state detectors; X-ray detectors (en)
http://linked.open.../riv/klicoveSlovo	Solid state detectors X-ray detectors Materials for solid-state detectors
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[DB4C12DB2D39]
http://linked.open...i/riv/nazevZdroje	Journal of Instrumentation
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	15 (xsd:int)
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	9
http://linked.open...iv/tvurceVysledku	Meduňa, Mojmír Müller, E. Bergamaschini, R. Chrastina, D. Isella, G. Marzegalli, A. Neels, A. Niedermann, P. Falub, Claudiu Valentin Isa, Fabio Kaufmann, R. Kreiliger, Thomas Miglio, Leo Dommann, Alex von Kanel, Hans
http://linked.open...ain/vavai/riv/wos	000336123200019
issn	1748-0221
number of pages	10 (xsd:int)
http://bibframe.org/vocab/doi	10.1088/1748-0221/9/03/C03019
http://localhost/t...ganizacniJednotka	14740

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