Attributes | Values |
---|
rdf:type
| |
rdfs:seeAlso
| |
Description
| - Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%.
- Monolithic integration of an X-ray absorber layer on a Si CMOS chip might be a potentially attractive way to improve detector performance at acceptable costs. In practice this requires, however, the epitaxial growth of highly mismatched layers on a Si-substrate, both in terms of lattice parameters and thermal expansion coefficients. The generation of extended crystal defects, wafer bowing and layer cracking have so far made it impossible to put the simple concept into practice. Here we present a way in which the difficulties of fabricating very thick, defect-free epitaxial layers may be overcome. It consists of an array of densely packed, three-dimensional Ge-crystals on a patterned Si(001) substrate. The finite gap between neighboring micron-sized crystals prevents layer cracking and substrate bowing, while extended defects are driven to the crystal sidewalls. We show that the Ge-crystals are indeed defect-free, despite the lattice misfit of 4.2%. (en)
|
Title
| - Epitaxial Ge-crystal arrays for X-ray detection
- Epitaxial Ge-crystal arrays for X-ray detection (en)
|
skos:prefLabel
| - Epitaxial Ge-crystal arrays for X-ray detection
- Epitaxial Ge-crystal arrays for X-ray detection (en)
|
skos:notation
| - RIV/00216224:14740/14:00075286!RIV15-MSM-14740___
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| |
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/00216224:14740/14:00075286
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - Materials for solid-state detectors; Solid state detectors; X-ray detectors (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
|
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Journal of Instrumentation
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Meduňa, Mojmír
- Müller, E.
- Bergamaschini, R.
- Chrastina, D.
- Isella, G.
- Marzegalli, A.
- Neels, A.
- Niedermann, P.
- Falub, Claudiu Valentin
- Isa, Fabio
- Kaufmann, R.
- Kreiliger, Thomas
- Miglio, Leo
- Dommann, Alex
- von Kanel, Hans
|
http://linked.open...ain/vavai/riv/wos
| |
issn
| |
number of pages
| |
http://bibframe.org/vocab/doi
| - 10.1088/1748-0221/9/03/C03019
|
http://localhost/t...ganizacniJednotka
| |