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  • Fourier components of discharge voltages were measured in two different reactive plasmas and their response to the creation or destruction of a thin film was studied. In reactive magnetron sputtering the effect of transition from the metallic to the compound mode accompanied by creation of a compound film on the sputtered target was observed. Further, deposition and etching of a DLC film and their effects on amplitudes of Fourier components of the discharge voltage were studied. It was shown that the Fourier components, including higher harmonic frequencies, sensitively react to the presence of a film. Therefore, they can be used as a powerful tool for the monitoring of deposition and etching processes. It was demonstrated that the behaviour of the Fourier components was caused in both experiments by the presence of the film. The behaviour of the Fourier components can be explained by the difference between coefficients of secondary electron emission of the film and its underlying material.
  • Fourier components of discharge voltages were measured in two different reactive plasmas and their response to the creation or destruction of a thin film was studied. In reactive magnetron sputtering the effect of transition from the metallic to the compound mode accompanied by creation of a compound film on the sputtered target was observed. Further, deposition and etching of a DLC film and their effects on amplitudes of Fourier components of the discharge voltage were studied. It was shown that the Fourier components, including higher harmonic frequencies, sensitively react to the presence of a film. Therefore, they can be used as a powerful tool for the monitoring of deposition and etching processes. It was demonstrated that the behaviour of the Fourier components was caused in both experiments by the presence of the film. The behaviour of the Fourier components can be explained by the difference between coefficients of secondary electron emission of the film and its underlying material. (en)
Title
  • Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage
  • Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage (en)
skos:prefLabel
  • Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage
  • Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage (en)
skos:notation
  • RIV/00216224:14310/10:00046208!RIV11-GA0-14310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/07/1669), P(GP202/08/P038), Z(MSM0021622411)
http://linked.open...iv/cisloPeriodika
  • 12
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 272489
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/10:00046208
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • plasma; higher harmonic frequencies; capacitively coupled discharge; reactive magnetron sputtering; DLC (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [C6ACBD7FC578]
http://linked.open...i/riv/nazevZdroje
  • Plasma Physics and Controlled Fusion
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 52
http://linked.open...iv/tvurceVysledku
  • Buršíková, Vilma
  • Dvořák, Pavel
  • Vašina, Petr
  • Žemlička, Radek
http://linked.open...ain/vavai/riv/wos
  • 000284406600013
http://linked.open...n/vavai/riv/zamer
issn
  • 0741-3335
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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