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  • Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
  • Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material. (en)
Title
  • Improved low-k dielectric properties using He/H2 plasma for resist removal
  • Improved low-k dielectric properties using He/H2 plasma for resist removal (en)
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  • Improved low-k dielectric properties using He/H2 plasma for resist removal
  • Improved low-k dielectric properties using He/H2 plasma for resist removal (en)
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  • RIV/00216224:14310/08:00038410!RIV10-MSM-14310___
http://linked.open...avai/riv/aktivita
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  • Z(MSM0021622410)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 371695
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  • RIV/00216224:14310/08:00038410
http://linked.open...riv/jazykVysledku
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  • low-k; strip plasma; porogen residues (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [7C108553D7CD]
http://linked.open...in/vavai/riv/obor
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http://linked.open...iv/tvurceVysledku
  • Maršík, Přemysl
  • Baklanov, Mikhail
  • Urbanowicz, Adam
  • De Roest, David
  • Ferchichi, Abdelkarim
  • Verdonck, Patrick
  • Berry, Ivan
  • De Gendt, Stefan
  • Escorcia, Orlando
  • Kaneko, Shinya
  • Luo, Shijian
  • Matsushita, Kiyohiro
  • Shamiryan, Denis
  • Sprey, Hessel
  • Travaly, Youssef
  • Tsui, N.
  • Vanstreels, Kris
  • Waldfried, Carlo
http://linked.open...n/vavai/riv/zamer
http://localhost/t...ganizacniJednotka
  • 14310
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