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Description
| - Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
- Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material. (en)
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Title
| - Improved low-k dielectric properties using He/H2 plasma for resist removal
- Improved low-k dielectric properties using He/H2 plasma for resist removal (en)
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skos:prefLabel
| - Improved low-k dielectric properties using He/H2 plasma for resist removal
- Improved low-k dielectric properties using He/H2 plasma for resist removal (en)
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skos:notation
| - RIV/00216224:14310/08:00038410!RIV10-MSM-14310___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216224:14310/08:00038410
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - low-k; strip plasma; porogen residues (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Maršík, Přemysl
- Baklanov, Mikhail
- Urbanowicz, Adam
- De Roest, David
- Ferchichi, Abdelkarim
- Verdonck, Patrick
- Berry, Ivan
- De Gendt, Stefan
- Escorcia, Orlando
- Kaneko, Shinya
- Luo, Shijian
- Matsushita, Kiyohiro
- Shamiryan, Denis
- Sprey, Hessel
- Travaly, Youssef
- Tsui, N.
- Vanstreels, Kris
- Waldfried, Carlo
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http://linked.open...n/vavai/riv/zamer
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http://localhost/t...ganizacniJednotka
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