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Description
  • Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním (cs)
  • The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature.
  • The objective of the present work was to investigate the influence of thermal annealing on the optical and mechanical properties as well as on the chemical structure of plasma deposited SiOxCyHz films. The films were prepared by PECVD from HMDSO/oxygen mixtures under a wide range of deposition conditions. Their optical and mechanical properties were studied by spectroscopic ellipsometry and depth sensing indentation technique, respectively. The atomic composition was determined by RBS and ERDA measurements. FTIR analysis was used to find the densities of particular chemical bonds in the films. The annealed films exhibited changes of the refractive index and extinction coefficient. The refractive index always decreased with increasing annealing temperature. The observed increase in hardness and elastic modulus after annealing was probably correlated with dehydration of the films and an increase of Si-O-Si bonds with increasing annealing temperature. (en)
Title
  • Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing
  • Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním (cs)
  • Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing (en)
skos:prefLabel
  • Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing
  • Strukturální změny vrstev SiOxCyHz připravených v plazmatu indukované zahříváním (cs)
  • Structural changes of plasma deposited SiOxCyHz thin films attained by thermal annealing (en)
skos:notation
  • RIV/00216224:14310/04:00021214!RIV08-MSM-14310___
http://linked.open.../vavai/riv/strany
  • C847-C852
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(KSK1010104), P(ME 489), P(OC 527.20), Z(MSM 143100003)
http://linked.open...iv/cisloPeriodika
  • 54
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 588452
http://linked.open...ai/riv/idVysledku
  • RIV/00216224:14310/04:00021214
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Deposited films; plasma enhanced CVD; HMDSO; FTIR; RBS (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [EC317A136F04]
http://linked.open...i/riv/nazevZdroje
  • Czech. J. Phys.
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 2004
http://linked.open...iv/tvurceVysledku
  • Buršíková, Vilma
  • Kučerová, Zuzana
  • Zajíčková, Lenka
  • Peřina, Vratislav
  • Franclová, Jana
http://linked.open...n/vavai/riv/zamer
issn
  • 0011-4626
number of pages
http://localhost/t...ganizacniJednotka
  • 14310
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