About: X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy

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About: X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. (en) We have studied the interface morphology of SiGe/Si multilayers by means of specular and nonspecular x-ray reflectivity under grazing incidence. The samples were grown by molecular beam epitaxy on silicon substrates with (001) surface orientation and with different directions of the surface misorientation. X-ray reflectivity measurements in different azimuths are compared to data from atomic force microscopy, which are used to simulate the x-ray experiments. With this combination of experimental techniques we have determined the structural properties, in particular the ordering of different features present at the sample surface and inside the multilayer at the SiGe/Si layer interfaces. (cs)
Title	X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy (en) X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy (cs)
skos:prefLabel	X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy (en) X-ray reflectivity of self-assembled structures in SiGe multilayers and comparison with atomic force microscopy (cs)
skos:notation	RIV/00216224:14310/01:00005203!RIV08-MSM-14310___
http://linked.open.../vavai/riv/strany	4836
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA202/00/0354), P(VS96102)
http://linked.open...iv/cisloPeriodika	9
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Holý, Václav Meduňa, Mojmír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	702347
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/01:00005203
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	SI(001) SURFACES; GE ISLANDS; SCATTERING; GROWTH; SUPERLATTICES (en)
http://linked.open.../riv/klicoveSlovo	GROWTH SCATTERING SUPERLATTICES SI(001) SURFACES GE ISLANDS
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[CF6C7F6026A7]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Self-organisation processes on the interfaces during epitaxial growth of semiconductor superlattices Laboratory of thin films and nanostructures
http://linked.open...UplatneniVysledku	2001
http://linked.open...v/svazekPeriodika	89
http://linked.open...iv/tvurceVysledku	Holý, Václav Meduňa, Mojmír Roch, T.
issn	0021-8979
number of pages	7 (xsd:int)
http://localhost/t...ganizacniJednotka	14310

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