About: Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions     Goto   Sponge   NotDistinct   Permalink

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  • A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(000 (1) over bar) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.
  • A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(000 (1) over bar) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m. (en)
Title
  • Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions
  • Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions (en)
skos:prefLabel
  • Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions
  • Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions (en)
skos:notation
  • RIV/00216208:11320/14:10288690!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita
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  • I
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  • 9
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  • 36731
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  • RIV/00216208:11320/14:10288690
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  • tunneling field effect transistor; space-charge-limited current; Schottky barrier transistor; semi-insulating silicon carbide; Epitaxial graphene (en)
http://linked.open.../riv/klicoveSlovo
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  • US - Spojené státy americké
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  • [9884730DE70F]
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  • Nano Letters
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  • 14
http://linked.open...iv/tvurceVysledku
  • Berger, Claire
  • Kunc, Jan
  • de Heer, Walt A.
  • Hu, Yike
  • Palmer, James
  • Gamal, Salah H.
  • Guo, Zelei
  • Hankinson, John
http://linked.open...ain/vavai/riv/wos
  • 000341544500038
issn
  • 1530-6984
number of pages
http://bibframe.org/vocab/doi
  • 10.1021/nl502069d
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  • 11320
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