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  • We investigated the influence of lapping, polishing and chemical etching of semi-insulating CdZnTe by the contactless resistivity and photoconductivity method. This method can determine the sample parameters independent of the type and quality of the metallization. We observed that the evaluated sample resistivity varies with the surface preparation method up to a factor of two. The photoconductivity anti-correlates with resistivity and it changes strongly within one order of magnitude. We determined a correlation between surface roughness, oxide layer thickness and material resistivity. Deviation of the trends is visible with surface preparation by chemical etching. We propose an optimal surface treatment to maximize the resistivity and thus to decrease the dark current. (C) 2014 Elsevier B.V. All rights reserved.
  • We investigated the influence of lapping, polishing and chemical etching of semi-insulating CdZnTe by the contactless resistivity and photoconductivity method. This method can determine the sample parameters independent of the type and quality of the metallization. We observed that the evaluated sample resistivity varies with the surface preparation method up to a factor of two. The photoconductivity anti-correlates with resistivity and it changes strongly within one order of magnitude. We determined a correlation between surface roughness, oxide layer thickness and material resistivity. Deviation of the trends is visible with surface preparation by chemical etching. We propose an optimal surface treatment to maximize the resistivity and thus to decrease the dark current. (C) 2014 Elsevier B.V. All rights reserved. (en)
Title
  • Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe
  • Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe (en)
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  • Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe
  • Contactless resistivity and photoconductivity correlation to surface preparation of CdZnTe (en)
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  • RIV/00216208:11320/14:10283177!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I, P(GA13-13671S), S
http://linked.open...iv/cisloPeriodika
  • Neuveden
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 8747
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/14:10283177
http://linked.open...riv/jazykVysledku
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  • Material characterization; Surface preparation; Contactless resistivity; CdTe (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [56D3B1240E1E]
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  • Applied Surface Science
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  • 315
http://linked.open...iv/tvurceVysledku
  • Franc, Jan
  • Mašek, Karel
  • Moravec, Pavel
  • Ulrych, Jan
  • Zázvorka, Jakub
  • Šedivý, Lukáš
  • Jesenská, Eva
http://linked.open...ain/vavai/riv/wos
  • 000342360300022
issn
  • 0169-4332
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.apsusc.2014.07.104
http://localhost/t...ganizacniJednotka
  • 11320
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