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  • The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix. (C) 2013 Elsevier B.V. All rights reserved
  • The origin and nature of star-shaped prismatic punching defects (PPDs) were analyzed by white-beam X-ray diffraction topography (WBXDT) and photoluminescence (PL) measurements. PPDs were observed in CdTe-based compounds that had Te-rich secondary phase defects and were annealed only under Cd overpressure. The evolutional features of the PPDs during annealing were similar to those of a diffusion process, that is, the in-diffusion of Cd vapor via Cd vacancies. PL mapping around the PPDs reveals that the stoichiometry of PPDs is the same as that of a normal matrix, and that PPDs are just structural defects with non-radiative emission induced by the exothermic reaction between Cd and Te. We find that Te-rich secondary phase defects can be removed without the generation of star-shaped PPDs, if the exothermic reaction rate can be slowed down to reduce the thermal gradient between the Te-rich region and the surrounding matrix. (C) 2013 Elsevier B.V. All rights reserved (en)
Title
  • Prismatic punching defects in CdTe compounds
  • Prismatic punching defects in CdTe compounds (en)
skos:prefLabel
  • Prismatic punching defects in CdTe compounds
  • Prismatic punching defects in CdTe compounds (en)
skos:notation
  • RIV/00216208:11320/14:10276183!RIV15-MSM-11320___
http://linked.open...avai/riv/aktivita
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  • I
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  • 39583
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  • RIV/00216208:11320/14:10276183
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  • Semiconducting II-VI materials; Cadmium compounds; Bridgman technique; Defects (en)
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  • NL - Nizozemsko
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  • [50CD554F8F9B]
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  • Journal of Crystal Growth
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  • 390
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  • Franc, Jan
  • Camarda, G. S.
  • Kim, K. H.
  • Bolotnikov, A. E.
  • Fochuk, P.
  • James, R. B.
http://linked.open...ain/vavai/riv/wos
  • 000335770000001
issn
  • 0022-0248
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jcrysgro.2013.12.015
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  • 11320
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