About: Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)

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About: Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1007/s10008-013-2200-6
Description	A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce3+ in full thickness of the film. The Pt/CeO2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO2 film and the kinetics of oxygen diffusion in the reduced CeO2 film are discussed. A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron spectroscopy. It was found that the grown epitaxial CeO2 film was fully oxidized, i.e., the valence of Ce atoms in the film was completely Ce4+. However, after the deposition of a small amount of Pt, it was revealed that Ce atoms were partially reduced to Ce3+ in full thickness of the film. The Pt/CeO2/Cu structure did not show switching behavior in resistance. The observed reduction of CeO2 film is considered to be responsible to the non-switching behavior. The thermodynamics of the reduction of the CeO2 film and the kinetics of oxygen diffusion in the reduced CeO2 film are discussed. (en)
Title	Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) (en)
skos:prefLabel	Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM) (en)
skos:notation	RIV/00216208:11320/13:10192093!RIV14-MSM-11320___
http://linked.open...avai/riv/aktivita	I S
http://linked.open...avai/riv/aktivity	I, S
http://linked.open...iv/cisloPeriodika	12
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Matolín, Vladimír Václavů, Michal Chundak, Mykhailo
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	73117
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/13:10192093
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	XPS; I-V curve; Memory; ReRAM; Reduction; Ceria (en)
http://linked.open.../riv/klicoveSlovo	ReRAM I-V curve XPS Reduction Ceria Memory
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[5A1C003065F6]
http://linked.open...i/riv/nazevZdroje	Journal of Solid State Electrochemistry
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	17
http://linked.open...iv/tvurceVysledku	Matolín, Vladimír Václavů, Michal Chundak, Mykhailo Chikyow, Toyohiro Yoshitake, Michiko
http://linked.open...ain/vavai/riv/wos	000327077000022
issn	1432-8488
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s10008-013-2200-6
http://localhost/t...ganizacniJednotka	11320

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