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  • We used the transient-current technique to delineate the effects of different contact metals on the formation of space charge and on the profiles of the electric field in CdZnTe radiation detectors. In contrast to existing results on the polarization of semiconductor radiation detectors, we find that detectors with ohmic (Au/Au) contacts may experience a larger distortion of the internal electric field than those having Schottky (Au/In) contacts. We explain this difference by postulating the presence of a deep hole trap (E_T) below the Fermi energy (E_F), which captures holes generated by the weakly injecting Au anode. The observed behaviour was described successfully by a numerical model relating the energy difference between E_T and E_F and the band bending at the contacts. We also present results on aging effects that limit the detector's performance and stability over long times.
  • We used the transient-current technique to delineate the effects of different contact metals on the formation of space charge and on the profiles of the electric field in CdZnTe radiation detectors. In contrast to existing results on the polarization of semiconductor radiation detectors, we find that detectors with ohmic (Au/Au) contacts may experience a larger distortion of the internal electric field than those having Schottky (Au/In) contacts. We explain this difference by postulating the presence of a deep hole trap (E_T) below the Fermi energy (E_F), which captures holes generated by the weakly injecting Au anode. The observed behaviour was described successfully by a numerical model relating the energy difference between E_T and E_F and the band bending at the contacts. We also present results on aging effects that limit the detector's performance and stability over long times. (en)
Title
  • Effect of contact preparation on the profile of the electric field in CdZnTe detectors
  • Effect of contact preparation on the profile of the electric field in CdZnTe detectors (en)
skos:prefLabel
  • Effect of contact preparation on the profile of the electric field in CdZnTe detectors
  • Effect of contact preparation on the profile of the electric field in CdZnTe detectors (en)
skos:notation
  • RIV/00216208:11320/13:10190133!RIV14-TA0-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA13-13671S), P(TE01020445), S
http://linked.open...iv/cisloPeriodika
  • 39
http://linked.open...vai/riv/dodaniDat
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  • 71429
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/13:10190133
http://linked.open...riv/jazykVysledku
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  • gap; gamma; energy; polarization; cdte; space-charge; nuclear-detectors; charge collection; radiation detectors; transient-current technique (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [3FCBD6EF732C]
http://linked.open...i/riv/nazevZdroje
  • Journal of Physics D - Applied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...v/svazekPeriodika
  • 46
http://linked.open...iv/tvurceVysledku
  • Belas, Eduard
  • Grill, Roman
  • Praus, Petr
  • Uxa, Štěpán
  • James, R. B.
http://linked.open...ain/vavai/riv/wos
  • 000324810400004
issn
  • 0022-3727
number of pages
http://bibframe.org/vocab/doi
  • 10.1088/0022-3727/46/39/395102
http://localhost/t...ganizacniJednotka
  • 11320
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