About: Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity     Goto   Sponge   NotDistinct   Permalink

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  • Two CdZnTe samples grown via the Vertical-Gradient-Freeze (VGF) method were studied through low-temperature photoluminescence, room-temperature resistivity and photoconductivity measured by the contactless method. Luminescence of three deep levels E-DL1=E-C-1.09 eV, E-DL2=E-C-0.70 eV and E-DL3=E-C-0.55 eV was observed. Correlation between the optical and the electrical investigation methods suggests the dependence of resistivity on DL3. Photoconductivity and subsequently the charge transport efficiency seem to depend on the occupation of a near midgap level DL2, which is influenced by the position of the Fermi level. A model of the Fermi level shift can be used to evaluate the results of the complementary investigation methods.
  • Two CdZnTe samples grown via the Vertical-Gradient-Freeze (VGF) method were studied through low-temperature photoluminescence, room-temperature resistivity and photoconductivity measured by the contactless method. Luminescence of three deep levels E-DL1=E-C-1.09 eV, E-DL2=E-C-0.70 eV and E-DL3=E-C-0.55 eV was observed. Correlation between the optical and the electrical investigation methods suggests the dependence of resistivity on DL3. Photoconductivity and subsequently the charge transport efficiency seem to depend on the occupation of a near midgap level DL2, which is influenced by the position of the Fermi level. A model of the Fermi level shift can be used to evaluate the results of the complementary investigation methods. (en)
Title
  • Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity
  • Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity (en)
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  • Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity
  • Photoluminescence spectroscopy of semi-insulating CdZnTe and its correlation to resistivity and photoconductivity (en)
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  • RIV/00216208:11320/13:10140048!RIV14-GA0-11320___
http://linked.open...avai/riv/aktivita
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  • I, P(GA13-13671S), S
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  • 1
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  • 96108
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  • RIV/00216208:11320/13:10140048
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  • Photoconductivity; Contactless resistivity; Deep level; Photoluminescence; CdTe (en)
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  • NL - Nizozemsko
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  • [5862708FE612]
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  • Journal of Luminescence
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  • 143
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  • Franc, Jan
  • Grill, Roman
  • Hlídek, Pavel
  • Zázvorka, Jakub
http://linked.open...ain/vavai/riv/wos
  • 000323912400061
issn
  • 0022-2313
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jlumin.2013.05.042
http://localhost/t...ganizacniJednotka
  • 11320
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