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Description
| - Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.
- Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity. (en)
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Title
| - Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
- Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors (en)
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skos:prefLabel
| - Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors
- Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors (en)
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skos:notation
| - RIV/00216208:11320/13:10140045!RIV14-MSM-11320___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216208:11320/13:10140045
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Semi-conducting II-VI materials; CdZnTe; Cadmium compounds; Radiation detectors; Defect (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Crystal Growth
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Belas, Eduard
- Franc, Jan
- Camarda, G. S.
- Cui, Y.
- Hossain, A.
- Kim, K. H.
- Yang, G.
- Bolotnikov, A. E.
- James, R. B.
- Kopach, O.
- Adams, A. L.
- Fochuk, P. M.
- Pinder, R.
- Radja, A.
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1016/j.jcrysgro.2012.11.041
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http://localhost/t...ganizacniJednotka
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