About: Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1107/S0021889813008182
Description	Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al(2)O(3)targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface. Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al(2)O(3)targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface. (en)
Title	Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix (en)
skos:prefLabel	Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix (en)
skos:notation	RIV/00216208:11320/13:10140018!RIV14-GA0-11320___
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP204/11/0785)
http://linked.open...iv/cisloPeriodika	March
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Holý, Václav Valeš, Václav Horák, Lukáš
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	76933
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/13:10140018
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	solids; dioxide; silicon; germanium nanocrystals (en)
http://linked.open.../riv/klicoveSlovo	silicon solids dioxide germanium nanocrystals
http://linked.open...odStatuVydavatele	DK - Dánské království
http://linked.open...ontrolniKodProRIV	[3B9665E6E6A7]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Crystallography
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	11 (xsd:int)
http://linked.open...vavai/riv/projekt	Self-organized growth and structure transitions of nanocrystals
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	46
http://linked.open...iv/tvurceVysledku	Baehtz, Carsten Holý, Václav Valeš, Václav Buljan, Maja Horák, Lukáš Bernstorff, Sigrid Radic, Nikola Grenzer, Joerg Muecklich, Arndt Roshchupkina, Olga Santic, Ana
http://linked.open...ain/vavai/riv/wos	000318943300015
issn	0021-8898
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1107/S0021889813008182
http://localhost/t...ganizacniJednotka	11320

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 48 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software