About: An STM study of desorption-induced thallium structures on the Si(111) surface

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About: An STM study of desorption-induced thallium structures on the Si(111) surface Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1016/j.susc.2011.12.016
Description	The scanning tunneling microscopy is used to study morphology of a Tl adlayer in various stages of Tl desorption from the Si(111) surface. Transition from the Si(111)/(1 x 1)-Tl structure through the (root 3 x root 3)R30 degrees mosaic phase to domains of metastable Si reconstructions is observed. Silicon substitutional atoms are found to be intrinsic to the (root 3 x root 3)R30 degrees structure. The temperature dependence of the amount of residual TI atoms on the surface is successfully fitted by a model using the first order desorption. The same desorption energy of (2.1 +/- 0.3) eV and frequency prefactor 5 x 10(14 +/- 2) s(-1) during all stages of the desorption are sufficient for the fitting. It is concluded that bonding of Tl in both (1 x 1) and (root 3 x root 3) configurations is of the same nature. The scanning tunneling microscopy is used to study morphology of a Tl adlayer in various stages of Tl desorption from the Si(111) surface. Transition from the Si(111)/(1 x 1)-Tl structure through the (root 3 x root 3)R30 degrees mosaic phase to domains of metastable Si reconstructions is observed. Silicon substitutional atoms are found to be intrinsic to the (root 3 x root 3)R30 degrees structure. The temperature dependence of the amount of residual TI atoms on the surface is successfully fitted by a model using the first order desorption. The same desorption energy of (2.1 +/- 0.3) eV and frequency prefactor 5 x 10(14 +/- 2) s(-1) during all stages of the desorption are sufficient for the fitting. It is concluded that bonding of Tl in both (1 x 1) and (root 3 x root 3) configurations is of the same nature. (en)
Title	An STM study of desorption-induced thallium structures on the Si(111) surface An STM study of desorption-induced thallium structures on the Si(111) surface (en)
skos:prefLabel	An STM study of desorption-induced thallium structures on the Si(111) surface An STM study of desorption-induced thallium structures on the Si(111) surface (en)
skos:notation	RIV/00216208:11320/12:10130689!RIV13-GA0-11320___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GP202/09/P033)
http://linked.open...iv/cisloPeriodika	13-14
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Setvín, Martin Kocán, Pavel Sobotík, Pavel Ošťádal, Ivan Matvija, Peter
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	122024
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10130689
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Desorption; Thallium; Si(111); Scanning tunneling microscopy (en)
http://linked.open.../riv/klicoveSlovo	Desorption Scanning tunneling microscopy Si(111) Thallium
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[4C7D1E1749AF]
http://linked.open...i/riv/nazevZdroje	Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth of ordered nanostructures of goup III metals on the Si(111)-5x5 surface
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	606
http://linked.open...iv/tvurceVysledku	Setvín, Martin Kocán, Pavel Ošťádal, Ivan Sobotík, Pavel Matvija, Peter
http://linked.open...ain/vavai/riv/wos	000304740600003
issn	0039-6028
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.susc.2011.12.016
http://localhost/t...ganizacniJednotka	11320

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