About: Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing

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About: Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing Goto Sponge NotDistinct Permalink

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Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1109/TNS.2012.2187069
Description	The presence of Te inclusions degrades the quality of today's CdZnTe (CZT) crystals used for X-and gamma-ray detectors; both their sizes and concentrations densities must be reduced. Over the past years, many researchers proposed using long-term annealing (>24 h) under Cd vapor pressure to reduce or even eliminate the inclusions visible under IR microscopes. We annealed detector-grade CZT samples for periods of 15 to 60 min under Cd-, Zn-, or Te-overpressure or in vacuum at 1000-1200 K. We determined the optimal temperature, duration, and the vapor atmosphere for such high-temperature annealing, typically at similar to 1100 K for 0.5-1.0 h. The results were very promising in eliminating Te-rich inclusions, even on twins where the inclusions are more stable than in the unperturbed lattice; indeed, we saw almost no inclusions whatsoever by IR transmission microscopy after such annealing. We note that eliminating inclusions at lower temperatures takes much longer. However, annealing under a Cd vapor pressure at temperatures above similar to 1170 K generates a large quantity of irregular Cd inclusions. The samples' resistance after annealing was estimated by I-V curves. The presence of Te inclusions degrades the quality of today's CdZnTe (CZT) crystals used for X-and gamma-ray detectors; both their sizes and concentrations densities must be reduced. Over the past years, many researchers proposed using long-term annealing (>24 h) under Cd vapor pressure to reduce or even eliminate the inclusions visible under IR microscopes. We annealed detector-grade CZT samples for periods of 15 to 60 min under Cd-, Zn-, or Te-overpressure or in vacuum at 1000-1200 K. We determined the optimal temperature, duration, and the vapor atmosphere for such high-temperature annealing, typically at similar to 1100 K for 0.5-1.0 h. The results were very promising in eliminating Te-rich inclusions, even on twins where the inclusions are more stable than in the unperturbed lattice; indeed, we saw almost no inclusions whatsoever by IR transmission microscopy after such annealing. We note that eliminating inclusions at lower temperatures takes much longer. However, annealing under a Cd vapor pressure at temperatures above similar to 1170 K generates a large quantity of irregular Cd inclusions. The samples' resistance after annealing was estimated by I-V curves. (en)
Title	Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing (en)
skos:prefLabel	Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing (en)
skos:notation	RIV/00216208:11320/12:10127581!RIV13-MSM-11320___
http://linked.open...avai/riv/aktivita	I
http://linked.open...avai/riv/aktivity	I
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Grill, Roman Belas, Eduard Bugár, Marek
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	134116
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10127581
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	inclusions; crystals; component overpressure; Cd0.9Zn0.1Te; Annealing (en)
http://linked.open.../riv/klicoveSlovo	Annealing crystals Cd0.9Zn0.1Te component overpressure inclusions
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[57376224BEF3]
http://linked.open...i/riv/nazevZdroje	IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	15 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	59
http://linked.open...iv/tvurceVysledku	Belas, Eduard Grill, Roman Cui, Y. Hossain, A. Kim, K. H. Yang, G. Bugár, Marek Bolotnikov, A. E. Camarda, G. Chan, W. Fochuk, P. James, R. B. Kopach, O. Nakonechnyi, I. Panchuk, O.
http://linked.open...ain/vavai/riv/wos	000302953700002
issn	0018-9499
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/TNS.2012.2187069
http://localhost/t...ganizacniJednotka	11320

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