About: Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate

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About: Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1016/j.tsf.2011.10.178
Description	The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application. It is found that SiO2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by generation of misfit dislocations at the interface, but a high structural quality of Ge can be achieved by suited growth conditions. The selective epitaxial growth of germanium on nano-structured periodic silicon pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application. It is found that SiO2 used as masking material plays the key role to influence the strain situation in the Si nano-islands. To analyze this in detail, X-ray diffraction techniques in combination with theoretical simulations based on the kinematical X-ray scattering from laterally strained nano-structures and finite element method (FEM) calculations of the strain field are applied. The oxide related strain in the Si scales about linearly with the thickness of the SiO2 mask, but FEM simulations supposing a homogeneous stress distribution in the oxide are not sufficient to describe the local strain distribution in the nano-structures. It is demonstrated that the Ge lattice relaxes completely during growth on the Si nano-islands by generation of misfit dislocations at the interface, but a high structural quality of Ge can be achieved by suited growth conditions. (en)
Title	Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate (en)
skos:prefLabel	Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate (en)
skos:notation	RIV/00216208:11320/12:10126509!RIV13-MSM-11320___
http://linked.open...avai/riv/aktivita	I Z
http://linked.open...avai/riv/aktivity	I, Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Matějová, Jana
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	161315
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10126509
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	X-ray diffraction; Nano-heteroepitaxy; Nano-structured Si; Ge epitaxy (en)
http://linked.open.../riv/klicoveSlovo	X-ray diffraction Ge epitaxy Nano-heteroepitaxy Nano-structured Si
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[D362D7552271]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	520
http://linked.open...iv/tvurceVysledku	Bauer, Joachim Kozlowski, Grzegorz Matějová, Jana Schroeder, Thomas Schubert, Markus Andreas Tillack, Bernd Yamamoto, Yuji Zaumseil, Peter
http://linked.open...ain/vavai/riv/wos	000301710800023
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	0040-6090
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.tsf.2011.10.178
http://localhost/t...ganizacniJednotka	11320

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