About: Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space

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About: Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1088/0957-4484/23/46/465705
Description	We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used. We present investigations on the strain properties of silicon capping layers on top of regular SiGe island arrays, in dependence on the Si-layer thickness. Such island arrays are used as stressors for the active channel in field-effect transistors where the desired tensile strain in the Si channel is a crucial parameter for the performance of the device. The thickness of the Si cap was varied from 0 to 30 nm. The results of high resolution x-ray diffraction experiments served as input to perform detailed strain calculations via finite element method models. Thus, detailed information on the Ge distribution within the buried islands and the strain interaction between the SiGe island and Si cap was obtained. It was found that the tensile strain within the Si capping layer strongly depends on its thickness, even if the Ge concentration of the buried dot remains unchanged, with tensile strains degrading if thicker Si layers are used. (en)
Title	Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space (en)
skos:prefLabel	Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space Strain distribution in Si capping layers on SiGe islands: influence of cap thickness and footprint in reciprocal space (en)
skos:notation	RIV/00216208:11320/12:10126345!RIV13-MSM-11320___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	46
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Holý, Václav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	171515
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10126345
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	silicon; mosfets; transistors; diffraction; shape; mobility; dots; overgrowth temperature (en)
http://linked.open.../riv/klicoveSlovo	silicon mobility shape dots diffraction mosfets overgrowth temperature transistors
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[6A5A0DF9468D]
http://linked.open...i/riv/nazevZdroje	Nanotechnology
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	23
http://linked.open...iv/tvurceVysledku	Holý, Václav Stangl, J. Bauer, G. Hrauda, N. Wintersberger, E. Deiter, C. Seeck, O. H. Sueess, M. J. Zhang, J. J.
http://linked.open...ain/vavai/riv/wos	000310460300020
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	0957-4484
number of pages	10 (xsd:int)
http://bibframe.org/vocab/doi	10.1088/0957-4484/23/46/465705
http://localhost/t...ganizacniJednotka	11320

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