About: Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1109/TNS.2012.2201219
Description	One of the most fundamental parameters relating to bulk crystal growth of CZT from the melt is the temperature gradient applied at the solid-liquid interface throughout the growth cycle. Cd(1-x)Z(x)Te ingots grown by the vertical gradient freeze method, using dynamic temperature gradients are presented. Several complementary experimental methods have been implemented to investigate the material including mapping of resistivity, photosensitivity, infrared transmission, and measuring the low-temperature photoluminescence. Photoconductivity mapping was performed by the contactless method. Correlation of contactless resistivity and photoconductivity maps illustrate that both parameters are anticorrelated in the middle of the ingots, but correlated towards the tail end of the ingot. This observation is explained in terms of an energy shift of the Fermi level that changes the average occupation of a mid-gap level. This reasoning is further supported by photoluminescence data. One of the most fundamental parameters relating to bulk crystal growth of CZT from the melt is the temperature gradient applied at the solid-liquid interface throughout the growth cycle. Cd(1-x)Z(x)Te ingots grown by the vertical gradient freeze method, using dynamic temperature gradients are presented. Several complementary experimental methods have been implemented to investigate the material including mapping of resistivity, photosensitivity, infrared transmission, and measuring the low-temperature photoluminescence. Photoconductivity mapping was performed by the contactless method. Correlation of contactless resistivity and photoconductivity maps illustrate that both parameters are anticorrelated in the middle of the ingots, but correlated towards the tail end of the ingot. This observation is explained in terms of an energy shift of the Fermi level that changes the average occupation of a mid-gap level. This reasoning is further supported by photoluminescence data. (en)
Title	Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method (en)
skos:prefLabel	Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method Semi-Insulated Cd1-xZnxTe Grown by the Vertical Gradient Freeze Method (en)
skos:notation	RIV/00216208:11320/12:10125922!RIV13-GA0-11320___
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(GAP102/10/0148), S
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Hlídek, Pavel Franc, Jan Zázvorka, Jakub
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	167403
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10125922
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	traps; photoluminecence; detector; crystal growth; CdZnTe (en)
http://linked.open.../riv/klicoveSlovo	crystal growth traps photoluminecence CdZnTe detector
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[70CF48213486]
http://linked.open...i/riv/nazevZdroje	IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	59
http://linked.open...iv/tvurceVysledku	Franc, Jan Babentsov, V. Hlídek, Pavel James, R. B. Crocco, J. Dieguez, E. Sochinskyi, M. V. Zázvorka, Jakub
http://linked.open...ain/vavai/riv/wos	000307893900006
issn	0018-9499
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/TNS.2012.2201219
http://localhost/t...ganizacniJednotka	11320

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