About: Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1109/TNS.2012.2191159
Description	As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To better quantify it, we assessed the ionization energy, i.e., the binding energy for the hole of the second (2-/1-) acceptor level of Cd vacancies in Cd1-xZnxTe(x approximate to 0.1). We characterized the defects in several ways, including measuring the photoconductivity at below-bandgap excitation, and photoconductivity quenching by comparing their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. In this way, we determined unambiguously that a deep acceptor, Cd vacancy, behaves as a doubly charged acceptor, and the second ionization level is located at similar to Ev+(0.5 +/- 0.05) eV, i.e., relatively far from the midgap similar to 0.8 eV. This configuration may determine the lifetime of holes, but it does not stabilize precisely the compensation condition, and it is not responsible for electron trapping and polarization. As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To better quantify it, we assessed the ionization energy, i.e., the binding energy for the hole of the second (2-/1-) acceptor level of Cd vacancies in Cd1-xZnxTe(x approximate to 0.1). We characterized the defects in several ways, including measuring the photoconductivity at below-bandgap excitation, and photoconductivity quenching by comparing their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. In this way, we determined unambiguously that a deep acceptor, Cd vacancy, behaves as a doubly charged acceptor, and the second ionization level is located at similar to Ev+(0.5 +/- 0.05) eV, i.e., relatively far from the midgap similar to 0.8 eV. This configuration may determine the lifetime of holes, but it does not stabilize precisely the compensation condition, and it is not responsible for electron trapping and polarization. (en)
Title	Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization (en)
skos:prefLabel	Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization (en)
skos:notation	RIV/00216208:11320/12:10125920!RIV13-GA0-11320___
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP102/10/0148)
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Franc, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	175993
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/12:10125920
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	photoconductivity; traps; detector; CdTe (en)
http://linked.open.../riv/klicoveSlovo	photoconductivity CdTe traps detector
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[EB6D26570513]
http://linked.open...i/riv/nazevZdroje	IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Influence of Te inclusions on performance of CdTe and CdZnTe radiation detectors
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	59
http://linked.open...iv/tvurceVysledku	Franc, Jan Babentsov, V. James, R. B. Dieguez, E. Sochinskyi, M. V.
http://linked.open...ain/vavai/riv/wos	000307893900009
issn	0018-9499
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/TNS.2012.2191159
http://localhost/t...ganizacniJednotka	11320

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