About: Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars     Goto   Sponge   NotDistinct   Permalink

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  • We report on the structural characterization of Ge clusters selectively grown by chemical vapor deposition on free-standing 50 nm wide Si(001) nanopillars. Synchrotron based x-ray diffraction studies and transmission electron microscopy were performed to experimentally verify the nanoheteroepitaxy theory as a technique to grow high quality Ge on Si(001). Although the structure dimensions are comparable to the theoretical values required for the strain partitioning phenomenon, the compliant character of Si is not unambiguously proven. In consequence, the strain is relieved by nucleation of misfit dislocations at the Ge/Si interface. By gliding out of threading arms, high quality Ge nanostructures are achieved.
  • We report on the structural characterization of Ge clusters selectively grown by chemical vapor deposition on free-standing 50 nm wide Si(001) nanopillars. Synchrotron based x-ray diffraction studies and transmission electron microscopy were performed to experimentally verify the nanoheteroepitaxy theory as a technique to grow high quality Ge on Si(001). Although the structure dimensions are comparable to the theoretical values required for the strain partitioning phenomenon, the compliant character of Si is not unambiguously proven. In consequence, the strain is relieved by nucleation of misfit dislocations at the Ge/Si interface. By gliding out of threading arms, high quality Ge nanostructures are achieved. (en)
Title
  • Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars
  • Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars (en)
skos:prefLabel
  • Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars
  • Compliant substrate versus plastic relaxation effects in Ge nanoheteroepitaxy on free-standing Si(001) nanopillars (en)
skos:notation
  • RIV/00216208:11320/11:10106219!RIV12-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 14
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 191417
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/11:10106219
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • nanopillars; Si001; free-standing; nanoheteroepitaxy; effects; relaxation; plastic; versus; substrate; Compliant (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [E78CF5A20D9C]
http://linked.open...i/riv/nazevZdroje
  • Applied Physics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 99
http://linked.open...iv/tvurceVysledku
  • Bauer, J.
  • Kozlowski, G.
  • Matějová, Jana
  • Schroeder, T.
  • Schubert, M. A.
  • Schulli, T.
  • Tillack, B.
  • Yamamoto, Y.
  • Zaumseil, P.
http://linked.open...ain/vavai/riv/wos
  • 000295625100022
http://linked.open...n/vavai/riv/zamer
issn
  • 0003-6951
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.3644948
http://localhost/t...ganizacniJednotka
  • 11320
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