Attributes | Values |
---|
rdf:type
| |
rdfs:seeAlso
| |
Description
| - Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +-0.03) at.-% of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the %22blue light domain%22 of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime.
- Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +-0.03) at.-% of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the %22blue light domain%22 of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. (en)
|
Title
| - Characterization of microstructural defects in melt grown ZnO single crystals
- Characterization of microstructural defects in melt grown ZnO single crystals (en)
|
skos:prefLabel
| - Characterization of microstructural defects in melt grown ZnO single crystals
- Characterization of microstructural defects in melt grown ZnO single crystals (en)
|
skos:notation
| - RIV/00216208:11320/11:10104072!RIV12-MSM-11320___
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| |
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/00216208:11320/11:10104072
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - single crystal; ZnO; melt grown; microstructural defects (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
|
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Journal of Applied Physics
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Anwand, W.
- Brauer, G.
- Cowan, T. E.
- Djurisic, A. B.
- Grynszpan, R. I.
- Kuriplach, Jan
- Klemm, V.
- Klimm, D.
- Ling, C. C.
- Procházka, Ivan
- Rafaja, D.
- Schreiber, G.
- Schulz, D.
- Čížek, Jakub
|
http://linked.open...ain/vavai/riv/wos
| |
http://linked.open...n/vavai/riv/zamer
| |
issn
| |
number of pages
| |
http://bibframe.org/vocab/doi
| |
http://localhost/t...ganizacniJednotka
| |