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  • Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +-0.03) at.-% of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the %22blue light domain%22 of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime.
  • Various nominally undoped, hydrothermally or melt grown (MG) ZnO single crystals have been investigated by standard positron lifetime measurements. Furthermore, optical transmission measurements and structural characterizations have been performed; the content of hydrogen in the bound state was determined by nuclear reaction analysis. A positron lifetime of 165-167 ps, measured for a brownish MG ZnO sample containing (0.30 +-0.03) at.-% of bound hydrogen, matches perfectly the value found for colorless MG ZnO crystals. The edge shift, observed in the %22blue light domain%22 of the optical absorption for the former sample with respect to the latter samples, is estimated to be 0.70 eV, and found equal to a value reported previously. The possible role of zinc interstitials is considered and discussed. Microstructure analysis by X-ray diffraction and transmission electron microscopy revealed the presence of stacking faults in MG crystals in a high concentration, which suggests these defects to be responsible for the observed positron lifetime. (en)
Title
  • Characterization of microstructural defects in melt grown ZnO single crystals
  • Characterization of microstructural defects in melt grown ZnO single crystals (en)
skos:prefLabel
  • Characterization of microstructural defects in melt grown ZnO single crystals
  • Characterization of microstructural defects in melt grown ZnO single crystals (en)
skos:notation
  • RIV/00216208:11320/11:10104072!RIV12-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 189979
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/11:10104072
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • single crystal; ZnO; melt grown; microstructural defects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [5236291FB691]
http://linked.open...i/riv/nazevZdroje
  • Journal of Applied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 109
http://linked.open...iv/tvurceVysledku
  • Anwand, W.
  • Brauer, G.
  • Cowan, T. E.
  • Djurisic, A. B.
  • Grynszpan, R. I.
  • Kuriplach, Jan
  • Klemm, V.
  • Klimm, D.
  • Ling, C. C.
  • Procházka, Ivan
  • Rafaja, D.
  • Schreiber, G.
  • Schulz, D.
  • Čížek, Jakub
http://linked.open...ain/vavai/riv/wos
  • 000289149900034
http://linked.open...n/vavai/riv/zamer
issn
  • 0021-8979
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.3559264
http://localhost/t...ganizacniJednotka
  • 11320
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