About: X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

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About: X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://pubs.acs.org/doi/full/10.1021/nl2013289
Description	For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor. For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor. (en)
Title	X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor (en)
skos:prefLabel	X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor (en)
skos:notation	RIV/00216208:11320/11:10103789!RIV12-MSM-11320___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Holý, Václav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	241995
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/11:10103789
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Transistor; Functioning Field-Effect; inside; Dot; Quantum; SiGe; Single; Nanodiffraction; X-ray (en)
http://linked.open.../riv/klicoveSlovo	Single Quantum SiGe Dot Functioning Field-Effect Nanodiffraction Transistor inside X-ray
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[299F89E615AB]
http://linked.open...i/riv/nazevZdroje	Nano Letters
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	14 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	11
http://linked.open...iv/tvurceVysledku	Holý, Václav Stangl, J. Bauer, G. Biasotto, C. Carbone, D. Etzelstorfer, T. Grutzmacher, D. Hrauda, N. Jovanovic, V. Mandl, B. Moers, J. Nanver, LK Wintersberger, E. Zhang, JJ
http://linked.open...ain/vavai/riv/wos	000292849400054
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies
issn	1530-6984
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1021/nl2013289
http://localhost/t...ganizacniJednotka	11320

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