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  • With the growing interest in CdTe detectors operating at high fluxes of X-ray photons the questions arises, whether the lifetime of charge carriers is limited by trapping and recombination at deep levels or by band-to-band recombination due to a strongly elevated concentrations of free electrons and holes compared to detectors working at low fluxes. A set of numerical simulations was done to resolve this question. The approach is based on the self-consistent steady state solution of electron and hole drift-diffusion equations using an iterative method. The effect of space charge on the electric field distribution and carrier transport through the sample is evaluated by solving the Poisson equation. The material simulation parameters were chosen to describe typical situations in state-of-the highly compensated semi-insulated CdTe and CdZnTe with deep near-midgap levels with concentrations in the range of 1011-1012 cmÿ3.
  • With the growing interest in CdTe detectors operating at high fluxes of X-ray photons the questions arises, whether the lifetime of charge carriers is limited by trapping and recombination at deep levels or by band-to-band recombination due to a strongly elevated concentrations of free electrons and holes compared to detectors working at low fluxes. A set of numerical simulations was done to resolve this question. The approach is based on the self-consistent steady state solution of electron and hole drift-diffusion equations using an iterative method. The effect of space charge on the electric field distribution and carrier transport through the sample is evaluated by solving the Poisson equation. The material simulation parameters were chosen to describe typical situations in state-of-the highly compensated semi-insulated CdTe and CdZnTe with deep near-midgap levels with concentrations in the range of 1011-1012 cmÿ3. (en)
Title
  • Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux
  • Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux (en)
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  • Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux
  • Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux (en)
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  • RIV/00216208:11320/11:10101026!RIV12-GA0-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GAP102/10/0148), S, Z(MSM0021620834)
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  • duben
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  • 199210
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  • RIV/00216208:11320/11:10101026
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  • recombination; high flux; CdTe; semi-insulated (en)
http://linked.open.../riv/klicoveSlovo
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  • NL - Nizozemsko
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  • [01A401E29E13]
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  • Nuclear Instruments & Methods in Physics Research - Section A
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  • 633
http://linked.open...iv/tvurceVysledku
  • Belas, Eduard
  • Franc, Jan
  • Grill, Roman
  • Höschl, Pavel
  • Dědič, Václav
  • Kubát, Jan
http://linked.open...ain/vavai/riv/wos
  • 000292782400029
http://linked.open...n/vavai/riv/zamer
issn
  • 0168-9002
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.nima.2010.06.134
http://localhost/t...ganizacniJednotka
  • 11320
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