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  • Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. We evaluated the distribution of space charge analyzing the slope of lux-ampere characteristics. Mobility/lifetime product maps were extracted fitting the Hecht relation to voltampere characteristics measured with a weak light at wavelength 750 nm. Correlation analysis of contactless resistivity and photoconductivity maps shows, that both these parameters are anticorrelated. This fact can be explained by a shift of Fermi level changing the average occupation of a midgap level. A decrease of occupation with an increasing resistivity results in an increase of electron trapping and decreased photoconductivity. This explanation is supported by simulating the dependence of the photocurrent on the Fermi level position near the midgap using parameters of midgap levels assumed in state-of-the art radiation detectors.
  • Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. We evaluated the distribution of space charge analyzing the slope of lux-ampere characteristics. Mobility/lifetime product maps were extracted fitting the Hecht relation to voltampere characteristics measured with a weak light at wavelength 750 nm. Correlation analysis of contactless resistivity and photoconductivity maps shows, that both these parameters are anticorrelated. This fact can be explained by a shift of Fermi level changing the average occupation of a midgap level. A decrease of occupation with an increasing resistivity results in an increase of electron trapping and decreased photoconductivity. This explanation is supported by simulating the dependence of the photocurrent on the Fermi level position near the midgap using parameters of midgap levels assumed in state-of-the art radiation detectors. (en)
Title
  • Photoconductivity Mapping of Semi-Insulating CdZnTe
  • Photoconductivity Mapping of Semi-Insulating CdZnTe (en)
skos:prefLabel
  • Photoconductivity Mapping of Semi-Insulating CdZnTe
  • Photoconductivity Mapping of Semi-Insulating CdZnTe (en)
skos:notation
  • RIV/00216208:11320/11:10100828!RIV12-GA0-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GAP102/10/0148), S, Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 4
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  • 220239
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/11:10100828
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • CdZnTe; Semi-Insulating; Mapping; Photoconductivity (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [8FBBF747FF36]
http://linked.open...i/riv/nazevZdroje
  • IEEE Transactions on Nuclear Science
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http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 58
http://linked.open...iv/tvurceVysledku
  • Belas, Eduard
  • Franc, Jan
  • Grill, Roman
  • Höschl, Pavel
  • Moravec, Pavel
  • Dědič, Václav
  • Kubát, Jan
  • Babentsov, Volodymyr
http://linked.open...ain/vavai/riv/wos
  • 000293977200010
http://linked.open...n/vavai/riv/zamer
issn
  • 0018-9499
number of pages
http://bibframe.org/vocab/doi
  • 10.1109/TNS.2011.2147333
http://localhost/t...ganizacniJednotka
  • 11320
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