About: Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study     Goto   Sponge   NotDistinct   Permalink

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  • An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K-alpha and synchrotron-generated photons show that the oxide-metal interface is formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni3Al(111) surfaces. The results of a photoelectric work function measurement are also discussed.
  • An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K-alpha and synchrotron-generated photons show that the oxide-metal interface is formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni3Al(111) surfaces. The results of a photoelectric work function measurement are also discussed. (en)
Title
  • Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study
  • Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study (en)
skos:prefLabel
  • Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study
  • Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study (en)
skos:notation
  • RIV/00216208:11320/10:10071368!RIV11-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 10-11
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 261070
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/10:10071368
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • thin layer; aluminum oxide; alumina; Ni; LEED; XPS (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [06AD90BC003E]
http://linked.open...i/riv/nazevZdroje
  • Surface and Interface Analysis
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 42
http://linked.open...iv/tvurceVysledku
  • Matolín, Vladimír
  • Skála, Tomáš
  • Tsud, Nataliya
  • Yoshitake, Michiko
  • Nemšák, Slavomír
  • Kim, Taeyoung
  • Yagyu, Shinjiro
http://linked.open...ain/vavai/riv/wos
  • 000282668800016
http://linked.open...n/vavai/riv/zamer
issn
  • 0142-2421
number of pages
http://localhost/t...ganizacniJednotka
  • 11320
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