Attributes | Values |
---|
rdf:type
| |
Description
| - We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs.
- We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of 40 ps was observed at temperature of 7 K in p-type CdTe and in n-type CdTe with a low concentration of electrons. The increase of the concentration of electrons leads to a substantial prolongation of the spin coherence time, which can be as long as 2.5 ns at 7 K in optimally doped samples, and to a modification of the g factor of electrons. The influence of the concentration of electrons is the most pronounced at low temperatures but it has a sizable effect also at room temperature. The optimal concentration of electrons to achieve the longest spin coherence time is 17-times higher in CdTe than in GaAs and the maximal low-temperature value of the spin coherence time in CdTe is 70 times shorter than the corresponding value in GaAs. (en)
|
Title
| - Influence of n-type doping on electron spin dephasing in CdTe
- Influence of n-type doping on electron spin dephasing in CdTe (en)
|
skos:prefLabel
| - Influence of n-type doping on electron spin dephasing in CdTe
- Influence of n-type doping on electron spin dephasing in CdTe (en)
|
skos:notation
| - RIV/00216208:11320/10:10070151!RIV11-GA0-11320___
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| - P(GD202/09/H041), P(LC510), S
|
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/00216208:11320/10:10070151
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - CdTev; dephasing; spin; electron; doping; n-type; Influence (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
|
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Physical Review B - Condensed Matter and Materials Physics
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...vavai/riv/projekt
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Belas, Eduard
- Grill, Roman
- Němec, Petr
- Malý, Petr
- Tesařová, Naďa
- Horodyská, Petra
- Rozkotová, Eva
- Sprinzl, Daniel
|
http://linked.open...ain/vavai/riv/wos
| |
issn
| |
number of pages
| |
http://localhost/t...ganizacniJednotka
| |