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  • Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.
  • Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection. (en)
Title
  • Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation
  • Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation (en)
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  • Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation
  • Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation (en)
skos:notation
  • RIV/00216208:11320/10:10057807!RIV11-MSM-11320___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika
  • 13
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 256653
http://linked.open...ai/riv/idVysledku
  • RIV/00216208:11320/10:10057807
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • defects; CdZnTe; Electric field (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [CE742E8AC6EA]
http://linked.open...i/riv/nazevZdroje
  • Applied Physics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 2010
http://linked.open...iv/tvurceVysledku
  • Franc, Jan
  • Grill, Roman
  • Sellin, Paul
  • Prekas, Georgios
http://linked.open...ain/vavai/riv/wos
  • 000276275300077
http://linked.open...n/vavai/riv/zamer
issn
  • 0003-6951
number of pages
http://localhost/t...ganizacniJednotka
  • 11320
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