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rdf:type
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Description
| - Monokrystaly (CdZn)Te se složením 3% Zn a monokrystaly CdTe dopované Indiem byly žíhány v různých teplotách a tlacích nasycených par Cd a Te s cílem snížit koncentraci Te a Cd inkluzí. Te inkluze byly zredukovány žíháním v parách Cd při teplotách nad 660oC. Po žíhání byly v krystalech zjištěny pouze malé tmavé body, které byly nalezeny v pozicích, které odpovídaly pozici původních inkluzí. Velikost Cd inkluzí byla zmenšena zíháním v Te parách při teplotách vyšších než 700 oC. (cs)
- (CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated annealing at temperatures above 660 oC. Only small residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700 oC.
- (CdZn)Te with the composition of 3% Zn and In-doped CdTe single crystals were annealed at various annealing temperatures and under various Cd or Te pressures with the aim of eliminating Te or Cd inclusions. Te inclusions were reduced by Cd-saturated annealing at temperatures above 660 oC. Only small residual dark spots, located at the original position of as-grown inclusions, were observed after annealing. The size of Cd inclusions was reduced by Te-rich annealing at temperatures higher than 700 oC. (en)
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Title
| - Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing
- Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing (en)
- Snížení koncentrace inkluzí v monokrystalech (CdZn)Te and CdTe:In žíháním (cs)
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skos:prefLabel
| - Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing
- Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing (en)
- Snížení koncentrace inkluzí v monokrystalech (CdZn)Te and CdTe:In žíháním (cs)
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skos:notation
| - RIV/00216208:11320/08:00100156!RIV09-MSM-11320___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/06/0258), Z(MSM0021620834)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216208:11320/08:00100156
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Reduction; Inclusions; Single; Crystals; Post-Growth; Annealing (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Electronic Materials
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Belas, Eduard
- Franc, Jan
- Grill, Roman
- Höschl, Pavel
- Moravec, Pavel
- Hlídek, Pavel
- Bugár, Marek
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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