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  • Nanocrystalline diamond film was deposited by microwave CVD in the ASTeX type reactor on a mirror polished (111) oriented n–doped silicon substrate. The deposition mix- ture consisted of 9 % of methane in hydrogen. The applied microwave power (2.45 GHz) and pressure were 850 W and 7.5 kPa, respectively. The substrate temperature was 1 090 K. The diamond nucleation process was enhanced by rf induced dc self–bias of -125 V. The film exhibited very low roughness (rms of heights 9.1 nm). Its hardness and elastic modules were 70 and 375 GPa, respectively. The optical constants were determined by combination of spectroscopic ellipsometry and reflectometry employing the Rayleigh– Rice theory for the roughness and the dispersion model of optical constants based on the parameterization of densities of states. The deposition rate was 57 nm/min including the 5 min nucleation step.
  • Nanocrystalline diamond film was deposited by microwave CVD in the ASTeX type reactor on a mirror polished (111) oriented n–doped silicon substrate. The deposition mix- ture consisted of 9 % of methane in hydrogen. The applied microwave power (2.45 GHz) and pressure were 850 W and 7.5 kPa, respectively. The substrate temperature was 1 090 K. The diamond nucleation process was enhanced by rf induced dc self–bias of -125 V. The film exhibited very low roughness (rms of heights 9.1 nm). Its hardness and elastic modules were 70 and 375 GPa, respectively. The optical constants were determined by combination of spectroscopic ellipsometry and reflectometry employing the Rayleigh– Rice theory for the roughness and the dispersion model of optical constants based on the parameterization of densities of states. The deposition rate was 57 nm/min including the 5 min nucleation step. (en)
Title
  • Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation
  • Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation (en)
skos:prefLabel
  • Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation
  • Microwave PECVD of nanocrystalline diamond with rf induced bias nucleation (en)
skos:notation
  • RIV/00177016:_____/06:#0000305!RIV11-GA0-00177016
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/05/0607), Z(AV0Z20410507), Z(AV0Z20650511), Z(MSM0021622411)
http://linked.open...iv/cisloPeriodika
  • 2006
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 485741
http://linked.open...ai/riv/idVysledku
  • RIV/00177016:_____/06:#0000305
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • PECVD (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [F790D4395958]
http://linked.open...i/riv/nazevZdroje
  • Czechoslovak Journal of Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 56
http://linked.open...iv/tvurceVysledku
  • Buršíková, V.
  • Klapetek, Petr
  • Franta, D.
  • Zajíčková, L.
  • Jašek, O.
  • Karásková, M.
  • Buršík, J.
  • Matějková, J.
  • Rek, A.
  • Frgala, Z.
http://linked.open...n/vavai/riv/zamer
issn
  • 0011-4626
number of pages
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