About: In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms

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Description	Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200°C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80° to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle. Zinc oxide ?lms doped by gallium were deposited using RF diode sputtering from a ceramic ZnO + 2% Ga2O3 target on Corning glass in argon atmosphere. Samples were supported in three different positions against a substrate holder e horizontal, and at 60 and 80° to the horizontal position. Two series of samples 700-1000 nm in thickness were prepared: one at room temperature (RT) and the second at 200°C. XRD, optical and electrical experiments indicated that the ?lms are polycrystalline having average crystallite sizes from 30 to 80 nm, integrated transmittances in the range of 400-1000 nm increased from 85 to 90 percent and optical band-gap values increased from 3 to 3.2 eV with higher deposition temperature. The resistivity of the obliquely sputtered samples positioned at 80° to the substrate holder was one order lower than the horizontally positioned samples. No signi?cant changes were observed in case of optical properties of the ?lms in dependence on the tilt-angle. (en)
Title	In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms (en)
skos:prefLabel	In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms In?uence of deposition regime on physical properties of gallium doped zinc oxide ?lms (en)
skos:notation	RIV/49777513:23640/12:43897333!RIV13-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(1M06031), P(ED2.1.00/03.0088)
http://linked.open...iv/cisloPeriodika	6
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	142809
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/12:43897333
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	optical properties; structural properies; ZnO:Ga, oblique sputttering (en)
http://linked.open.../riv/klicoveSlovo	ZnO:Ga oblique sputttering structural properies optical properties
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[C6A7A2ED576D]
http://linked.open...i/riv/nazevZdroje	Vacuum
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials and components for environment protection Centre of the New Technologies and Materials
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	86
http://linked.open...iv/tvurceVysledku	Novotný, Ivan Netrvalová, Marie Šutta, Pavol Prušáková, Lucie Tvarožek, Vladimír
issn	0042-207X
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.vacuum.2011.07.064
http://localhost/t...ganizacniJednotka	23640

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