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  • Presence of a small fraction of high-energy particles in the total particle flux is an important factor which affects the structure of atom-by-atom deposited thin films. In this paper the role of high-energy (up to 400 eV) particles is studied by molecular dynamics simulations, focused on obtaining quantitative information not accessible experimentally. In the case of film-forming particles, the results show that one to few percent of high-energy atoms is sufficient for amorphization of otherwise crystalline materials. Consequently, all film-forming atoms have to be considered separately and have the optimum energy (optimum averaged energy per atom is insufficient). In the case of energetic bombardment by non film-forming particles such as Ar, the results show that the film amorphization can take place but it requires higher energies and/or much higher number of particle impacts compared to the former case.
  • Presence of a small fraction of high-energy particles in the total particle flux is an important factor which affects the structure of atom-by-atom deposited thin films. In this paper the role of high-energy (up to 400 eV) particles is studied by molecular dynamics simulations, focused on obtaining quantitative information not accessible experimentally. In the case of film-forming particles, the results show that one to few percent of high-energy atoms is sufficient for amorphization of otherwise crystalline materials. Consequently, all film-forming atoms have to be considered separately and have the optimum energy (optimum averaged energy per atom is insufficient). In the case of energetic bombardment by non film-forming particles such as Ar, the results show that the film amorphization can take place but it requires higher energies and/or much higher number of particle impacts compared to the former case. (en)
Title
  • Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study
  • Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study (en)
skos:prefLabel
  • Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study
  • Quantitative investigation of the role of high-energy particles in Al2O3 thin film growth: A molecular-dynamics study (en)
skos:notation
  • RIV/49777513:23520/14:43923370!RIV15-GA0-23520___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA14-03875S)
http://linked.open...iv/cisloPeriodika
  • September 2014
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 41096
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/14:43923370
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Al2O3; molecular dynamics; high-energy ions; high-energy bombardment; ion-assisted deposition; crystal growth (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [42DF996E50F3]
http://linked.open...i/riv/nazevZdroje
  • Surface and Coatings Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 254
http://linked.open...iv/tvurceVysledku
  • Houška, Jiří
http://linked.open...ain/vavai/riv/wos
  • 000340977300016
issn
  • 0257-8972
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.surfcoat.2014.05.072
http://localhost/t...ganizacniJednotka
  • 23520
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