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Description
| - Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition.
- Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition. (en)
- Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí (cs)
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Title
| - Amorphous Ge-Se thin films prepared by pulsed laser deposition
- Amorphous Ge-Se thin films prepared by pulsed laser deposition (en)
- Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí (cs)
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skos:prefLabel
| - Amorphous Ge-Se thin films prepared by pulsed laser deposition
- Amorphous Ge-Se thin films prepared by pulsed laser deposition (en)
- Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí (cs)
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skos:notation
| - RIV/00216275:25310/04:00001530!RIV08-MSM-25310___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216275:25310/04:00001530
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - pulsed laser deposition; amorphous chalcogenides; thin films (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Frumar, Miloslav
- Němec, Petr
- Černošek, Zdeněk
- Vlček, Milan
- Jedelský, Jaroslav
- Štábl, Marek
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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