About: Dispersion model of two-phonon absorption: application to c-Si

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Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.opticsinfobase.org/view_article.cfm?gotourl=http%3A%2F%2Fwww.opticsinfobase.org%2FDirectPDFAccess%2FB9069063-9DEF-05B1-C29672DD04E649DB_296190%2Fome-4-8-1641.pdf%3Fda%3D1%26id%3D296190%26seq%3D0%26mobile%3Dno&org=
Description	A dispersion model describing two-phonon absorption is developed using several simplifications of the quasiparticle approach. The dielectric response is constructed from absorption bands corresponding to individual additive and subtractive combinations of phonon branches. The model also includes thermal effects, changes of the transition strength with temperature, originating in Bose-Einstein statistics, and the shift of phonon frequencies accompanying thermal expansion. The model is applied to the analysis of experimental data measured in the IR range on crystalline silicon. The modeled spectral dependencies of optical constants are capable of describing all features in the transmittance spectra 70-1000 cm(-1) observable at 300K for float-zone silicon. The phonon frequencies in the points of symmetry are obtained independently in good agreement with ab initio calculations. The model of thermal effects is verified using ellipsometric measurements 300-1000 cm(-1) in the temperature range of 300-500 K. A dispersion model describing two-phonon absorption is developed using several simplifications of the quasiparticle approach. The dielectric response is constructed from absorption bands corresponding to individual additive and subtractive combinations of phonon branches. The model also includes thermal effects, changes of the transition strength with temperature, originating in Bose-Einstein statistics, and the shift of phonon frequencies accompanying thermal expansion. The model is applied to the analysis of experimental data measured in the IR range on crystalline silicon. The modeled spectral dependencies of optical constants are capable of describing all features in the transmittance spectra 70-1000 cm(-1) observable at 300K for float-zone silicon. The phonon frequencies in the points of symmetry are obtained independently in good agreement with ab initio calculations. The model of thermal effects is verified using ellipsometric measurements 300-1000 cm(-1) in the temperature range of 300-500 K. (en)
Title	Dispersion model of two-phonon absorption: application to c-Si Dispersion model of two-phonon absorption: application to c-Si (en)
skos:prefLabel	Dispersion model of two-phonon absorption: application to c-Si Dispersion model of two-phonon absorption: application to c-Si (en)
skos:notation	RIV/00216224:14310/14:00073318!RIV15-MSM-14310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(ED2.1.00/03.0086), P(TA02010784)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Ohlídal, Ivan Zajíčková, Lenka Nečas, David Franta, Daniel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Masarykova univerzita / Přírodovědecká fakulta
http://linked.open...dnocenehoVysledku	11754
http://linked.open...ai/riv/idVysledku	RIV/00216224:14310/14:00073318
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	HFO2 THIN-FILMS; LATTICE ABSORPTION; OPTICAL-PROPERTIES; SILICON; DEPOSITION (en)
http://linked.open.../riv/klicoveSlovo	HFO2 THIN-FILMS LATTICE ABSORPTION DEPOSITION OPTICAL-PROPERTIES SILICON
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[19A13DB7ABDE]
http://linked.open...i/riv/nazevZdroje	OPTICAL MATERIALS EXPRESS
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Regional R&D center for low-cost plasma and nanotechnology surface modifications Optimization of thin film systems used in the optics industry
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	4
http://linked.open...iv/tvurceVysledku	Franta, Daniel Nečas, David Ohlídal, Ivan Zajíčková, Lenka
http://linked.open...ain/vavai/riv/wos	000341647900016
issn	2159-3930
number of pages	16 (xsd:int)
http://bibframe.org/vocab/doi	10.1364/OME.4.001641
http://localhost/t...ganizacniJednotka	14310

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