Diluted magnetic (III,Mn)As semiconductors are extensively studied due to their wide possible applications in spintronics and compatibility with present semiconductor technology. Their magnetic properties strongly depend on the elastic deformation. In this project we will investigate the influence of the surface morphology on the elastic strain and magnetic properties of the epitaxial (Ga,Mn)As layer grown on GaAs substrate. We will focus especially on the lithographically modified single epitaxial layer and the influence of patterned InGaAs layer with varying indium concentration. The strain in (Ga,Mn)As layers will be studied theoretic ad numerically and by the x-ray scattering experiments. (en)
Cílem tohoto projektu bude studium elastické deformace v epitaxních vrstvách GaMnAs a vliv deformace na magnetické vlastnosti. Deformace ve vzorcích budou studovány pomocí teoretických modelů a rozptylu rentgenového záření.