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| Description
| - The aim of the grant proposal is to determine the impact of the QD overgrowth process on the structure and electronic properties of buried InAs/GaAs QD systems prepared by MOVPE and emitting around 1.55 mm. InxGa1-xAs and GaAs1-ySby capping layers will be used to keep the emission wavelength around 1.55 mm by protecting the QDs from drastic size changes during their overgrowth. The relations between the In content of the InxGa1-xAs capping layer, the surface reconstruction and the photoluminescence (PL) will be analyzed and the growth parameters optimized to achieve the desired wavelength and a high PL intensity. In the case of the GaAs1-ySby capping, the aim is the same. More over, the transition between the (spatially) direct band gap alignment (InAs QD /GaAs) and the indirect alignment (InAs QD/GaAs1-ySby, y > 14 %) will be studied both theoretically (using the envelope function formalism) and experimentally. The results will provide the Sb concentration necessary for obtaining a high intensity of the ground state PL. In addition, free QDs and QDs with thin SRLs will be covered by metallic overlayers - we expect changes of the electronic states of the QDs, depending on the work function of the metal. The metallization will also allow us to study the electric-field dependence of the PL and the electric properties of the heterostructure with the Schottky contact between the overlayer and the SRL. (en)
- Cílem projektu je určit vliv překrytí InAs/GaAs kvantových teček (QD) připravených metodou MOVPE s emisí ~ 1,55 mikronu na jejich morfologii a elektronové stavy. Optimalizací parametrů InGaAs a GaAsSb krycích vrstev bude minimalizován nežádoucí modrý posuv luminiscence QD při jejich překrytí.
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| Title
| - Impact of capping layers on electronic states in quantum dots (en)
- Vliv krycích vrstev na elektronové stavy v kvantových tečkách
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| skos:notation
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| http://linked.open...avai/cep/aktivita
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| http://linked.open...kovaStatniPodpora
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| http://linked.open...ep/celkoveNaklady
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| http://linked.open...datumDodatniDoRIV
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| http://linked.open...i/cep/druhSouteze
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| http://linked.open...ep/duvernostUdaju
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| http://linked.open.../cep/fazeProjektu
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| http://linked.open...ai/cep/hlavniObor
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| http://linked.open...hodnoceniProjektu
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| http://linked.open...vai/cep/kategorie
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| http://linked.open.../cep/klicovaSlova
| - GaAs, InAs, elektronové stavy, kvantové tečky (en)
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| http://linked.open...ep/partnetrHlavni
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| http://linked.open...inujicichPrijemcu
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| http://linked.open...cep/pocetPrijemcu
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| http://linked.open...ocetSpoluPrijemcu
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| http://linked.open.../pocetVysledkuRIV
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| http://linked.open...enychVysledkuVRIV
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| http://linked.open...lneniVMinulemRoce
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| http://linked.open.../prideleniPodpory
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| http://linked.open...iciPoslednihoRoku
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| http://linked.open...atUdajeProjZameru
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| http://linked.open.../vavai/cep/soutez
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| http://linked.open...usZobrazovaneFaze
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| http://linked.open...ai/cep/typPojektu
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| http://linked.open...ep/ukonceniReseni
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| http://linked.open.../cep/vedlejsiObor
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| http://linked.open...ep/zahajeniReseni
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| http://linked.open...jektu+dodavatelem
| - The project gone according to plan both in terms of expertise and in terms of disbursement of funds. (en)
- Řešení projektu proběhlo podle plánu jak z hlediska odborného tak i z hlediska čerpání finančních prostředků. (cs)
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| http://linked.open...tniCyklusProjektu
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| http://linked.open.../cep/klicoveSlovo
| - GaAs
- InAs
- elektronové stavy
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| is http://linked.open...vavai/cep/projekt
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