About: Growth of ordered nanostructures of goup III metals on the Si(111)-5x5 surface     Goto   Sponge   NotDistinct   Permalink

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  • The proposed postdoc project aims to study the growth of self-ordered quantum dots of group III metals on the Si(111)-5x5 surface. A recently found method based on desorption of Tl from the Tl-Si(111)1x1 will be used to prepare the Si(111)-5x5 surface. A combination of experimental and theoretical method is planed to be used - scnanning tunneling microscopy (STM) and Monte Carlo simulations (KMC). STM realized at various temperatures will provide information on mobility of deposited atoms of group III metals on the Si(111)-5x5 surface. Observation directly during growth will allow to describe a process of dot nucleation. Results obtained by STM will be used to define a KMC model. The KMC simulations will provide refinement of growth parameters, namely diffusion barriers. Conditions resulting in growth of the best ordered quantum dots will be be found using the KMC simulations. Local density of states of the nanostructures will be measured using scanning tunneling spectroscopy (STS). Results will be compared to growth of nanostructures on the often cited Si(111)-7x7 surface. (en)
  • Studium růstu uspořádaných klastrů kovů IIIA skupiny na povrchu Si(111)-5x5, popis pohybu kovových atomů a nukleace klastrů na povrchu 5x5, Monte Carlo simulace růstu klastrů na povrchu 5x5, nalezení podmínek pro přípravu maximálně uspořádaných kvantových teček. (cs)
Title
  • Růst uspořádaných nanostruktur kovů IIIA skupiny na povrchu Si(111)-5x5 (cs)
  • Growth of ordered nanostructures of goup III metals on the Si(111)-5x5 surface (en)
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  • heteroepitaxe; STM; KMC; Si(111)-5x5 (en)
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