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Description
  • The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by means of DLTS and CV measurement.
  • The paper deals with the study of radiation defects and thermal donors introduced in silicon by hydrogen and helium implantation and subsequent annealing. Introduction and thermal stability of introduced deep and shallow levels was investigated by means of DLTS and CV measurement. (en)
Title
  • Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
  • Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing (en)
skos:prefLabel
  • Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing
  • Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing (en)
skos:notation
  • RIV/68407700:21230/08:00164298!RIV10-MSM-21230___
http://linked.open...avai/riv/aktivita
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  • P(LC06041), Z(MSM6840770014)
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  • 391344
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  • RIV/68407700:21230/08:00164298
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  • ion implantation; silicon; deep levels; shallow levels; hydrogen; helium; dlts (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [FF4D35C9F28C]
http://linked.open...v/mistoKonaniAkce
  • Erice
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  • Zürich
http://linked.open...i/riv/nazevZdroje
  • Gettering and Defect Engineering in Semiconductor Technology XII - Proceedings of the 12th International Autumn Meeting EMFCSC
http://linked.open...in/vavai/riv/obor
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  • Hazdra, Pavel
  • Komarnitskyy, Volodymyr
http://linked.open...vavai/riv/typAkce
http://linked.open...ain/vavai/riv/wos
  • 000252201200033
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
issn
  • 1012-0394
number of pages
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  • Transtech Publications
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  • 978-3-908451-43-3
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  • 21230
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